2MBI200N-060-03

2MBI200N-060-03 600V / 200A 2 in one-package Features · VCE(sat) classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure IGBT Module Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Equivalent Circuit Schematic C2E1 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES VGES IC IC pulse -I C -IC pulse PC Tj Tstg Vis Mounting *1 Terminals *1 Rating 600 ±20 200 400 200 400 780 +150 -40 to +125 AC 2500 (1min.) 3.5 3.5 Unit V V A A A A W °C °C V N·m N·m C1 E2 ¤ ¤ G1 E1 G2 ¤ Current control circuit E2 VCE(sat) classification Rank F A B C D Lenge 1.85 2.00 2.15 2.30 2.50 Conditions to 2.10V to 2.25V to 2.40V to 2.60V to 2.80V Ic = 200A VGE = 15V Tj = 25°C *1 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. – – 4.5 – – – – – – – – – – – – – – 13200 2930 1330 0.6 0.2 0.6 0.2 – – Conditions Max. 2.0 30 7.5 2.8 – – – 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A VGE=0V VCE=10V f=1MHz VCC=300V IC=200A VGE=±15V RG=9.1ohm IF=200A, VGE=0V IF=200A mA µA V V pF Unit µs V µs Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. – – – – – 0.025 Conditions Max. 0.16 0.35 – IGBT Diode the base to cooling fin °C/W °C/W °C/W Unit Thermal resistance *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI200N-060-03 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C IGBT Module Collector current vs. Collector-Emitter voltage Tj=125°C 400 400 Collector current : Ic [A] 200 Collector current : Ic [A] 0 1 2 3 4 5 300 300 200 100 100 0 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 VCE [V] VCE [V] Collector-Emitter voltage : 0 5 10 15 20 25 10 8 8 Collector-Emitter voltage : 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 1000 100 100 10 0 100 200 300 Collector current : Ic [A] 10 0 100 200 300 Collector current : Ic [A] 2MBI200N-060-03 IGBT Module Switching time vs. RG Vcc=300V, Ic=200A, VGE=±15V, Tj=25°C 500 Dynamic input characteristics Tj=25°C 25 Switching time : ton, tr, toff, tf [n sec.] 1000 Collector-Emitter voltage : VCE [V] 400 20 300 15 100 200 10 100 5 10 5 10 Gate resistance : RG [ohm] 0 0 200 400 600 800 Gate charge : Qg [nC] 1000 0 1200 Forward current vs. Forward voltage VGE=0V 500 Reverse recovery characteristics trr, Irr, vs. IF Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 400 Forward current : IF [A] 300 100 50 200 100 0 0 1 2 Forward voltage : VF [V] 3 4 10 0 100 200 300 Forward current : IF [A] Transient thermal resistance 2000 1800 Thermal resistance : Rth (j-c) [°C/W] 1600 Collector current : Ic [A] 1400 1200 1000 800 600 400 0.01 200 0 0.001 0.01 0.1 1 0 Reversed biased safe operating area +VGE=15V, -VGE < 15V, Tj < 125°C, RG > 9.1 ohm = = = 0.1 100 Pulse width : PW [sec.] 200 300 400 500 Collector-Emitter voltage : VCE [V] 600 Gate-Emitter voltage : VGE [V] 2MBI200N-060-03 IGBT Module Switching loss vs. Collector current Vcc=300V, RG=9.1 ohm, VGE=±15V 20 Capacitance vs. Collector-Emitter voltage Tj=25°C Switching loss : Eon, Eoff, Err [mJ/cycle] 15 Capacitance : Cies, Coes, Cres [nF] 10 10 1 5 0 0 100 200 300 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Outline Drawings, mm