2MBI200S-120

2MBI200S-120 1200V / 200A 2 in one-package Features · High speed switching · Voltage drive · Low inductance module structure IGBT Module Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector Continuous current 1ms Symbol VCES VGES Tc=25°C IC Tc=80°C Tc=25°C IC pulse Tc=80°C -IC -IC pulse PC Tj Tstg V is Mounting *2 Terminals *2 Rating 1200 ±20 300 200 600 400 200 400 1500 +150 -40 to +125 AC 2500 (1min. ) 3.5 4.5 Unit V V A A A A A A W °C °C V N·m N·m Equivalent Circuit Schematic C2E1 C1 E2 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage *1 Screw torque G1 E1 G2 E2 *1 : Aii terminals should be connected together when isolation test will be done *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6) Terminals 3.5 to 4.5 N·m(M6) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr tr(i) toff tf VF trr Symbol Rth(j-c) Rth(j-c) Rth(c-f)*2 Characteristics Min. Typ. Max. – – 1.0 – – 0.4 5.5 7.2 8.5 – 2.3 2.6 – 2.8 – – 24000 – – 5000 – – 4400 – – 0.35 1.2 – 0.25 0.6 – 0.1 – – 0.45 1.0 – 0.08 0.3 – 2.3 3.0 – 2.0 – – – 0.35 Characteristics Min. Typ. – – – – – 0.025 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA Tc=25° C VGE=15V, IC=200A Tc=125°C VGE=0V VCE=10V f=1MHz VCC =600V IC=200A VGE=±15V RG=4.7 ohm Tj=25°C Tj=125°C IF=200A IF=200A, VGE=0V Unit mA µA V V pF µs Turn-off time Forward on voltage Reverse recovery time V µs Thermal resistance characteristics Item Thermal resistance Conditions Max. 0.085 IGBT 0.18 Diode the base to cooling fin – °C/W °C/W °C/W Unit *2 : This is the value which is defined mounting on the additional cooling fin with thermal compound 2 MBI200S-120 Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 500 500 IGBT Module Collector current vs. Collector-Emiiter voltage Tj= 125°C (typ.) VGE= 20V15V 12V 400 400 VGE= 20V 15V 12V Collector current : Ic [ A ] 300 10V Collector current : Ic [ A ] 300 10V 200 200 100 100 8V 8V 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 500 10 Collector-Emiiter voltage vs. Gate-Emitter voltage Tj= 25°C (typ.) Tj= 25°C 400 Tj= 125°C 300 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [ A ] 6 200 4 Ic= 400A 2 Ic= 200A Ic=100A 100 0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ] 0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 100000 1000 Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C 25 Capacitance : Cies, Coes, Cres [ pF ] Collector - Emitter voltage : VCE [ V ] 800 20 Cies 600 15 10000 5000 400 10 Coes Cres 1000 200 5 500 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ] 0 0 500 1000 Gate charge : Qg [ nC ] 1500 0 2000 Gate - Emitter voltage : VGE [ V ] 2 MBI200S-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 25°C 1000 1000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 4.7ohm, Tj= 125°C toff Switching time : ton, tr, toff, tf [ nsec ] 500 Switching time : ton, tr, toff, tf [ nsec ] toff 500 ton ton tr tr tf 100 100 tf 50 0 100 200 300 Collector current : Ic [ A ] 50 0 100 200 300 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C 5000 ton 60 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=4.7ohm Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff Switching time : ton, tr, toff, tf [ nsec ] tr Eon(125°C) 1000 40 Eon(25°C) 500 Eoff(125°C) 20 Eoff(25°C) Err(125°C) 100 tf Err(25°C) 50 1 10 Gate resistance : Rg [ohm] 100 0 0 100 200 Collector current : Ic [ A ] 300 400 Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C 160 450 400 Reverse bias safe operating area +VGE=15V, -VGE=4.7ohm, Tj=