2MBI200U2A-060_0409

2MBI200U2A-060 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 600V / 200A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 600 ±20 200 400 200 400 660 +150 -40 to +125 2500 3.5 3.5 Unit V V A Continuous 1ms Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device W °C VAC N·m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5), Terminal 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =300V IC=200A VGE=±15V RG= 16 Ω VGE=0V IF=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 6.2 6.7 – 2.15 – 2.40 – 1.85 – 2.10 – 14 – 0.40 – 0.22 – 0.16 – 0.48 – 0.07 – 1.90 – 1.95 – 1.60 – 1.65 – – – 1.39 Unit Max. 1.0 200 7.7 2.45 – – – – 1.20 0.60 – 1.20 0.45 2.30 – – – 0.35 – mA nA V V Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=200A µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.05 Unit Max. 0.19 0.32 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2MBI200U2A-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 VGE=20V 15V 12V Collector current : Ic [A] IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 500 VGE=20V 15V 12V 400 Collector current : Ic [A] 400 300 10V 300 10V 200 200 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 Tj=25°C Tj=125°C 400 Collector current : Ic [A] Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 8 300 6 200 4 Ic=400A Ic=200A Ic=100A 100 2 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) 100.0 Capacitance : Cies, Coes, Cres [ nF ] Dynamic Gate charge (typ.) Vcc=300V, Ic=200A, Tj= 25°C Collector-Emitter voltage : VCE [ 100V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Cies 10.0 VGE Cres 1.0 Coes VCE 0 200 400 600 800 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 2MBI200U2A-060 IGBT Module Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16Ω, Tj=125°C 1000 toff 1000 ton toff tr ton 100 tr tf 100 tf 10 0 100 200 300 400 Collector current : Ic [ A ] 10 0 100 200 300 400 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 20 Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=16Ω 15 Eoff(125°C) Eon(125°C) Eoff(25°C) 1000 toff ton 100 tr tf 10 Eon(25°C) 5 Err(125°C) 0 Err(25°C) 0 100 200 300 400 10 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=200A, VGE=±15V, Tj= 125°C 30 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 25 20 15 10 5 0 1.0 10.0 Gate resistance : Rg [ Ω ] Err 100.0 Eon Collector current : Ic [ A ] 500 Reverse bias safe operating area (max.) +VGE=15V,-VGE = 16Ω ,Tj