2MBI200UC-120

2MBI200UC-120 IGBT MODULE (U series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Ic pulse Conditions Maximum ratings 1200 ±20 300 200 600 400 200 400 1040 150 -40 to +125 2500 3.5 4.5 Units V V Continuous 1ms Tc=25°C Tc=80°C Tc=25°C Tc=80°C A -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*2) 1 device AC : 1min. W °C °C VAC N·m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE (th) VCE (sat) (teminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (teminal) VF (chip) trr R lead Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 200mA VGE = 15V IC = 200A VGE Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz Characteristics min. typ. max. 2.0 400 4.5 6.5 8.5 1.85 2.20 2.10 1.75 2.10 2.00 22 0.36 1.20 0.21 0.60 0.03 0.37 1.00 0.07 0.30 1.70 2.00 1.80 1.60 1.90 1.70 0.35 0.53 Units mA nA V V nF VCC = 600V IC = 200A VGE = ±15V RG = 3Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C µs Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Note *3: Biggest internal terminal resistance among arm. VGE = 0V IF = 200A IF = 200A V µs mΩ Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Characteristics min. typ. max. 0.12 0.20 0.025 Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI200UC-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip VGE=20V 15V 12V Collector current : Ic [A] IGBT Modules 500 500 Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 400 Collector current : Ic [A] 400 VGE=20V 15V 12V 300 10V 300 10V 200 200 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 500 Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip Tj=25°C Tj=125°C Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 400 Collector current : Ic [A] 8 300 6 200 4 Ic=400A Ic=200A Ic=100A 5 10 15 20 25 100 2 0 0 1 2 3 4 5 0 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C Cies 10.0 VGE Cres 1.0 Coes 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] VCE 0 300 600 900 1200 Gate charge : Qg [ nC ] 2 2MBI200UC-120 IGBT Modules 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj=125°C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 100 200 300 400 Collector current : Ic [ A ] 10 0 100 200 300 400 Collector current : Ic [ A ] 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 40 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω Eoff(125°C) Eon(125°C) ton toff 1000 30 Eoff(25°C) 20 Eon(25°C) 100 tr tf 10 Err(125°C) Err(25°C) 10 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 0 0 100 200 300 400 Collector current : Ic [ A ] 150 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C Eon 500 Reverse bias safe operating area (max.) +VGE=15V,-VGE = 3Ω ,Tj