2MBI225VN-120-50

2MBI225VN-120-50 IGBT MODULE (V series) 1200V / 225A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Ic pulse Collector current -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Operating junction temperature (under switching conditions) Tjop Case temperature TC Storage temperature Tstg between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals ( *4) Conditions Continuous 1ms 1ms 1 device Tc=80°C Tc=80°C Maximum ratings 1200 ±20 225 450 225 450 1070 175 150 125 -40 to +125 2500 3.5 4.5 Units V V A W °C VAC Nm Maximum Ratings and Characteristics Inverter AC : 1min. Note *1: All terminals should be connected together during the test. Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Symbols I CES I GES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R B Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, I C = 225mA VGE = 15V I C = 225A VCE = 10V, VGE = 0V, f = 1MHz VCC = 600V I C = 225A VGE = ±15V RG = 1.6Ω Collector-Emitter saturation voltage Inverter Input capacitance Turn-on time Turn-off time Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Forward on voltage VGE = 0V I F = 225A I F = 225A T=25°C T=100°C T=25/50°C Reverse recovery time Thermistor Resistance B value Tj=25°C Tj=125°C Tj=150°C Tj=25°C Tj=125°C Tj=150°C Characteristics min. typ. max. 3.0 600 6.0 6.5 7.0 2.20 2.65 2.55 2.60 1.85 2.30 2.20 2.25 18 550 1200 180 600 120 1050 2000 110 350 2.05 2.50 2.20 2.15 1.70 2.15 1.85 1.80 200 600 5000 465 495 520 3305 3375 3450 Characteristics min. typ. max. 0.14 0.19 0.0167 - Units mA nA V V nF nsec V nsec Ω K Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) ( *5) Symbols Rth(j-c) Rth(c-f) Conditions Inverter IGBT Inverter F WD with Thermal Compound Units °C/W Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI225VN-120-50 Characteristics (Representative) [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 Vge=20V 400 Collector current: Ic [A] 300 200 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage: Vce [V] 0 0 1 2 3 4 10V 15V 12V Collector current: Ic [A] 400 300 200 100 IGBT Modules [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Tj= 150°C / chip 500 Vge= 20V 15V 12V 10V 8V 5 Collector-Emitter voltage: Vce [V] [INVERTER] Collector current vs. Collector-Emitter voltage (typ.) Vge= 15V / chip 500 400 300 200 100 0 0 1 2 3 4 5 Collector-Emitter Voltage: Vce [V] 150°C Tj=25°C 125°C Collector-Emitter Voltage: Vce [V] [INVERTER] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj= 25°C / chip 10 8 6 4 2 0 5 10 15 20 25 Gate-Emitter Voltage: Vge [V] Ic=450A Ic=225A Ic=112A Collector Current: Ic [A] [INVERTER] Gate Capacitance vs. Collector-Emitter Voltage (typ.) Vge= 0V, ƒ= 1MHz, Tj= 25°C Gate Capacitance: Cies, Coes, Cres [nF] Collector-Emitter voltage: Vce [200V/div] Gate-Emitter voltage: Vge [5V/div] 100 [INVERTER] Dynamic Gate Charge (typ.) Vcc=600V, Ic=225A, Tj= 25°C 10 Cies Vce Vge 1 Cres Coes 0. 1 0 5 10 15 20 25 30 Collector-Emitter voltage: Vce [V] 0 500 1000 1500 2000 Gate charge: Qg [nC] 2 2MBI225VN-120-50 IGBT Modules [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C 10000 Switching time: ton, tr, toff, tf [nsec] Switching time: ton, tr, toff, tf [nsec] [INVERTER] Switching time vs. Collector current (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C 10000 Tj=125oC Tj=150oC 1000 t of f ton tr 100 tf 1000 t of f ton tr 100 tf 10 0 100 200 300 400 500 Collector current: Ic [A] 10 0 100 200 300 400 500 Collector current: Ic [A] [INVERTER] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 10000 Switching time: ton, tr, toff, tf [nsec] Tj=125oC Tj=150oC 1000 t of f ton tr 100 tf [INVERTER] Switching loss vs. Collector current (typ.) Vcc=600, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C 80 Tj=125oC Tj=150oC 60 Eoff 40 Err 20 Eon 0 0 100 200 300 400 500 Collector current: Ic [A] 10 0. 1 1 10 100 Gate resistance: Rg [Ω] [INVERTER] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=225A, Vge=±15V, Tj=125°C, 150°C Switching loss: Eon, Eoff, Err [mJ/pulse] 150 Tj=125oC Tj=150oC 100 Eon Collector current: Ic [A] [INVERTER] Reverse bias safe operating area (max.) +Vge=15V, -Vge=15V, Rg=1.6Ω, Tj=150°C 600 500 400 300 200 100 0 50 Eoff Err 0 0. 1 1. 0 10.0 100.0 Gate resistance: Rg [Ω] 0 500 1000 1500 Collector-Emitter voltage: Vce [V] 3 2MBI225VN-120-50 IGBT Modules [INVERTER] Forward Current vs. Forward Voltage (typ.) chip 500 400 300 200 100 150°C 0 0 1 2 3 Forward on voltage: Vf [V] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=25°C 10000 Forward current: If [A] Tj=25°C 1000 Irr trr 125°C 100 10 0 100 200 300 400 500 Forward current: If [A] [INVERTER] Reverse Recovery Characteristics (typ.) Vcc=600V, Vge=±15V, Rg=1.6Ω, Tj=125°C, 150°C 10000 Thermal resistanse: Rth(j-c) [°C/W] Reverse recovery current: Irr [A] Reverse recovery time: trr [nsec] Tj=125oC Tj=150oC 1000 1 Transient Thermal Resistance (max.) FW D 0. 1 IGBT Irr trr 100 0.01 10 0 100 200 300 400 500 Forward current: If [A] 0.001 0.001 0 . 01 0. 1 1 Pulse W idth : Pw [sec] [THERMISTOR] Temperature characteristic (typ.) 100 Resistance : R [kΩ] 10 1 0. 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 Temperature [°C] 4 2MBI225VN-120-50 IGBT Modules Outline Drawings, mm OUT Equivalent Circuit Schematic [ Inverter ] [ Thermistor ] C P T1 T2 G1 E1 OUT G2 E2 N 5 N P 2MBI225VN-120-50 IGBT Modules WARNING 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Device Technology Co., Ltd. is (or shall be deemed) granted. Fuji Electric Device Technology Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Device Technology Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design fail-safe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. • Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment • Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Device Technology Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. • Transportation equipment (mounted on cars and ships) • Trunk communications equipment • Traffic-signal control equipment • Gas leakage detectors with an auto-shut-off feature • Emergency equipment for responding to disasters and anti-burglary devices • Safety devices • Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). • Space equipment • Aeronautic equipment • Nuclear control equipment • Submarine repeater equipment 7. Copyright ©1996-2008 by Fuji Electric Device Technology Co., Ltd. All rights reserved. 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