2MBI300N-120-01

2MBI300N-120-01 1200V / 300A 2 in one-package Features · VCE(sat) classified for easy parallel connection · High speed switching · Voltage drive · Low inductance module structure IGBT Module Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Equivalent Circuit Schematic C2E1 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES Unit Rating V 1200 V VGES ±20 A IC 300 A IC pulse 600 A -I C 300 A -IC pulse 600 W PC 2100 °C Tj +150 °C Tstg -40 to +125 V Vis AC 2500 (1min.) N·m Mounting *1 3.5 N·m Terminals *2 4.5 C1 E2 ¤ ¤ G1 E1 G2 ¤ Current control circuit E2 VCE(sat) classification R ank F A B C D E Lenge 2.25 to 2.50V 2.40 to 2.65V 2.55 to 2.80V 2.70 to 2.95V 2.85 to 3.10V 3.00 to 3.30V Conditions Ic = 300A VGE = 15V Tj = 25°C * 1 : Recommendable value : 2.5 to 3.5N·m (M5) or (M6) *2 : Recommendable value : 3.5 to 4.5N·m (M6) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF t rr Characteristics Min. Typ. – – 4.5 – – – – – – – – – – – – – – 48000 17400 15480 – 0.25 – 0.35 – – Max. 3.0 45 7.5 3.3 – – – 1.2 0.6 1.5 0.5 3.0 0.35 Conditions V GE =0V, V CE =1200V V CE =0V, V GE =±20V V CE =20V, I C=300mA V GE=15V, I C=300A V GE =0V V CE =10V f=1MHz V CC =600V I C =300A V GE =±15V R G =2.7ohm I F=300A, VGE=0V I F =300A Unit mA µA V V pF µs V µs Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)* Characteristics Min. Typ. – – – – – 0.0167 Conditions Max. 0.06 0.15 – IGBT Diode the base to cooling fin °C/W °C/W °C/W Unit Thermal resistance * : T his is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI300N-120-01 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25°C 700 700 IGBT Module Collector current vs. Collector-Emitter voltage Tj=125°C 600 600 500 Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 500 400 400 300 300 200 200 100 100 0 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25°C Collector-Emitter vs. Gate-Emitter voltage Tj=125°C 10 10 Collector-Emitter voltage : VCE [V] 8 Collector-Emitter voltage : VCE [V] 0 5 10 15 20 25 8 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=±15V, Tj=25°C Switching time vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=±15V, Tj=125°C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 0 100 200 300 400 500 600 1000 100 100 10 Collector current : Ic [A] 10 0 100 200 300 400 Collector current : Ic [A] 500 600 2MBI300N-120-01 IGBT Module Switching time vs. RG Vcc=600V, Ic=300A, VGE=±15V, Tj=25°C 1000 Dynamic input characteristics Tj=25°C 25 800 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 20 600 15 400 10 200 5 100 0 1 Gate resistance : RG [ohm] 10 0 500 1000 1500 2000 2500 3000 3500 Gate charge : Qg [nC] 0 4000 Forward current vs. Forward voltage VGE=0V 500 700 Reverse recovery characteristics trr, Irr, vs. IF 600 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 500 Forward current : IF [A] 400 300 200 100 100 0 0 1 2 3 4 5 0 100 200 300 400 500 600 Forward voltage : VF [V] Forward current : IF [A] Transient thermal resistance 3000 Reversed biased safe operating area +VGE=15V, -VGE < 15V, Tj < 125°C, RG > 2.7 ohm = = = 2500 Thermal resistance : Rth (j-c) [°C/W] 0.1 Collector current : Ic [A] 2000 1500 0.01 1000 500 0.001 0.001 0 0.01 0.1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 1000 2MBI300N-120-01 IGBT Module Switching loss vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=±15V 125 100 Switching loss : Eon, Eoff, Err [mJ/cycle] 100 Capacitance : Cies, Coes, Cres [nF] Capacitance vs. Collector-Emitter voltage Tj=25°C 75 10 50 25 1 0 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Outline Drawings, mm