2MBI300N-120

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Ratings 1200 ± 20 300 600 300 600 2100 +150 -40 ∼ +125 2500 3.5 4.5 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=300mA VGE=15V IC=300A VGE=0V VCE=10V f=1MHz VCC=600V IC=300A VGE=± 15V RG=2.7Ω IF=300A VGE=0V IF=300A Min. Typ. Max. 3.0 45 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 48000 17400 15480 0.25 0.35 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.06 0.15 Units °C/W 0.0167 Collector current vs. Collector-Emitter voltage T j=25°C V GE = 20V, 15V, 12V, 10V 600 600 Collector current vs. Collector-Emitter voltage T j=125°C V GE = 20V, 15V, 12V, 10V [A] C Collector current : I Collector current : I 400 C [A] 400 8V 200 200 8V 0 0 1 2 3 4 Collector-Emitter voltage : V CE [ V] 5 0 0 1 2 3 4 5 C ollector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 Collector-Emitter vs. Gate-Emitter voltage T j=125°C [V] CE Collector-Emitter voltage :V 6 IC= 4 600A 300A 2 150A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Collector-Emitter voltage V CE 8 [V] 8 6 IC= 4 600A 300A 2 150A 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC =600V, R G =2.7 Ω , V GE =±15V, T j=25°C Switching time vs. Collector current V CC =600V, R G =2.7 Ω , V GE ±15V, Tj=125°C t off 1000 t off 1000 t on tf tr [nsec] on, t r, t off, t f tr Switching time : t 10 0 200 400 600 Collector current : I C [ A] Switching time : t 100 on, t r, t off, t f tf [nsec] 100 10 0 t on 200 400 600 Collector current : I C [ A] Switching time vs. R G V CC =600V, I C =300A, V GE =±15V, T j=25°C 1000 Dynamic input characteristics T j=25°C 25 V CC =400V 600V 800 800V 20 [nsec] t off t on 1000 CE on, t r, t off, t f Collector-Emitter voltage : V [V] 600 15 Switching time : t tr tf 400 10 200 100 5 1 10 Gate resistance : R G [ Ω ] Forward current vs. Forward voltage V GE = O V 0 0 500 0 1000 1500 2000 2500 3000 3500 4000 Gate charge : Q G [ nC] Reverse recovery characteristics t rr, I rr v s. I F T j=125°C 25°C 600 rr [nsec] t rr 1 25°C I rr 1 25°C I rr 2 5°C t rr 2 5°C 100 F [A] Reverse recovery current : I 0 1 2 3 4 5 rr [A] Forward current : I 400 200 0 Reverse recovery time :t 0 200 400 600 Forward voltage : V F [ V] Forward current : I F [ A] Reversed biased safe operating area Transient thermal resistance 3000 +V GE =15V, -V GE < 15V, T j< 125°C, R G > 2.7 Ω Diode 2500 [°C/W] 0,1 [A] IGBT th(j-c) 2000 SCSOA (non-repetitive pulse) 1500 Thermal resistance : R 0,01 Collector current : I C 1000 500 RBSOA (Repetitive pulse) 0,001 0 ,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [ V] Switching loss vs. Collector current V CC=600V, R GE =2.7 Ω , V GE =±15V 125 E off 1 25°C 100 Capacitance vs. Collector-Emitter voltage T j=25°C E off, E rr [mJ/cycle] C oes , C res [nF] 100 E on 1 25°C 75 E on 2 5°C 50 E off 2 5°C E rr 1 25°C 25 E rr 2 5°C 0 0 100 200 300 400 500 600 C ies on, Switching loss : E Capacitance : C ies , 10 C oes C res 1 0 5 10 15 20 25 30 35 C ollector Current : I C [ A] Collector-Emitter Voltage : V CE [ V] Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 P.O. Box 702708Box 702708 - Dallas, Phone (972) 233-1589(972) (972) 233-0481 - www.collmer.com P.O. - Dallas, TX 75370 TX - (972) 733-1700 - Fax 381-9991 (fax)