2MBI300U4H-170

IGBT MODULE 2MBI300U4H-170 MS5F 6137 May. 27 05 May. 27 05 S.Miyashita T.Miyasaka Y.Seki K.Yamada MS5F6137 1 13 May.-27 - 05 T.Miyasaka K.Yamada Y.Seki MS5F6137 2 13 2MBI300U4H-170 1. Outline Drawing ( Unit : mm ) 2. Equivalent circuit MS5F6137 3 13 3.Absolute Maximum Ratings ( at Tc= 25°C unless otherwise specified Items Collector-Emitter voltage Gate-Emitter voltage Sym bols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Viso Continuous 1ms Tc=25°C Tc=80°C Tc=25°C Tc=80°C Conditions Maximum Ratings 1700 ±20 400 300 800 600 300 600 1470 150 -40 ~ +125 3400 3.5 4.5 Units V V A Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base (*1) voltage Screw Torque Mounting (*2) Terminals (*3) 1ms 1 device W °C VAC Nm AC : 1min. (*1) All terminals should be connected together when isolation test will be done. (*2) Recommendable Value : Mounting 2.5~3.5 Nm (M5 or M6) (*3) Recommendable Value : Terminals 3.5~4.5 Nm (M6) 4. Electrical characteristics ( at Tj= 25°C unless otherwise specified) Items Zero gate voltage Collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R lead Conditions VGE = 0V VCE = 1700V VCE = 0V VGE=±20V VCE = 20V Ic = 300mA Tj= 25°C Tj=125°C Tj= 25°C Ic = 300A Tj=125°C VCE=10V,VGE=0V,f=1MHz Vcc = 900V Ic = 300A VGE=±15V Rg = 1.5 VGE=15V Tj= 25°C Tj=125°C Tj= 25°C Tj=125°C Characteristics min. typ. max. 4.5 6.5 2.45 2.85 2.25 2.65 28 0.62 0.39 0.05 0.55 0.09 2.00 2.20 1.80 2.00 0.53 4.0 800 8.5 2.60 2.40 1.20 0.60 1.50 0.30 2.35 2.15 0.6 - Units mA nA V V nF s Turn-off time VGE=0V IF = 300A IF = 300A Forward on voltage V Reverse recovery time Lead resistance, terminal-chip(*4) s m (*4) Biggest internal terminal resistance among arm. MS5F6137 4 13 5. Thermal resistance characteristics Items Thermal resistance(1device) Contact Thermal resistance (1device) (*5) Symbols Rth(j-c) Rth(c-f) IGBT FWD Conditions Characteristics min. typ. max. 0.0125 0.085 0.14 - Units °C/W with Thermal Compound (*5) This is the value which is defined mounting on the additional cooling fin with thermal compound. 6. Indication on module Logo of production 2MBI300U4H-170 300A 1700V Lot.No. Place of manufacturing (code) 7.Applicable category This specification is applied to IGBT Module named 2MBI300U4H-170 . 8.Storage and transportation notes The module should be stored at a standard temperature of 5 to 35°C and humidity of 45 to 75% . Store modules in a place with few temperature changes in order to avoid condensation on the module surface. Avoid exposure to corrosive gases and dust. Avoid excessive external force on the module. Store modules with unprocessed terminals. Do not drop or otherwise shock the modules when transporting. 9. Definitions of switching time 10. Packing and Labeling Display on the packing box - Logo of production - Type name - Lot No - Products quantity in a packing box MS5F6137 5 13 11. Reliability test results Reliabilit y Test Items Test categories Test items 1 Terminal Strength (Pull test) 2 Mounting Strength Pull force Test time Screw torque Test methods and conditions : 40N : 10±1 sec. : 2.5 ~ 3.5 N m (M5) 3.5 ~ 4.5 N m (M6) Test time : 10±1 sec. Range of frequency : 10 ~ 500Hz Sweeping time : 15 min. Acceleration : 100m/s2 Sweeping direction : Each X,Y,Z axis Test time : 6 hr. (2hr./direction) Maximum acceleration : 5000m/s2 Pulse width : 1.0msec. Direction : Each X,Y,Z axis Test time : 3 times/direction Storage temp. : 125±5 Test duration : 1000hr. Storage temp. : -40±5 Test duration : 1000hr. Storage temp. : 85±2 Relative humidity : 85±5% Test duration : 1000hr. Test temp. : 120 2 Test humidity : 85±5% Test duration : 96hr. Test temp. : Low temp. -40 High temp. 125 5 5 Reference Number Acceptnorms of ance EIAJ ED-4701 sample number 5 5 (0:1) (0:1) (Aug.-2001 edition) Mechanical Tests Test Method 401 Method Test Method 402 method Test Method 403 Reference 1 Condition code B 3 Vibration 5 (0:1) 4 Shock Test Method 404 Condition code B 5 (0:1) 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 5 5 5 (0:1) (0:1) (0:1) 5 (0:1) Environment Tests 5 Temperature Cycle 5 (0:1) Dwell time Number of cycles 6 Thermal Shock Test temp. RT 5 ~ 35 : High ~ RT ~ Low ~ RT 1hr. 0.5hr. 1hr. 0.5hr. : 100 cycles : High temp. 100 +0 -5 Low temp. 0 Used liquid : Water with ice and boiling water Dipping time : 5 min. par each temp. Transfer time : 10 sec. Number of cycles : 10 cycles +5 -0 Test Method 307 method Condition code A 5 (0:1) MS5F6137 6 13 Reliabilit y Test Items Test categories Test items 1 High temperature Reverse Bias Test methods and conditions Reference Number Acceptnorms ance of EIAJ ED-4701 sample number 5 (0:1) (Aug.-2001 edition) Test Method 101 Test temp. Bias Voltage Bias Method Endurance Tests Endurance Tests Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity Bias Voltage Bias Method Test duration ON time OFF time Test temp. Number of cycles : Ta = 125 5 (Tj 150 ) : VC = 0.8×VCES : Applied DC voltage to C-E VGE = 0V : 1000hr. Test Method 101 5 (0:1) : Ta = 125 5 (Tj 150 ) : VC = VGE = +20V or -20V : Applied DC voltage to G-E VCE = 0V : 1000hr. : : : : : : : : : 85 2 oC 85 5% VC = 0.8×VCES Applied DC voltage to C-E VGE = 0V 1000hr. 2 sec. 18 sec. Tj=100±5 deg 150 , Ta=25±5 Tj 15000 cycles Test Method 102 Condition code C 5 (0:1) 4 Intermitted Operating Life (Power cycle) ( for IGBT ) Test Method 106 5 (0:1) Failure Criteria Item Characteristic Symbol Failure criteria Unit Lower limit Upper limit LSL×0.8 USL×2 USL×2 USL×1.2 USL×1.2 USL×1.2 USL×1.2 mA A mA V V mV mV Note Electrical Leakage current ICES characteristic ±IGES Gate threshold voltage VGE(th) Saturation voltage VCE(sat) Forward voltage VF Thermal IGBT VGE resistance or VCE FWD VF Isolation voltage Viso Visual Visual inspection inspection Peeling Plating and the others USL×1.2 Broken insulation The visual sample LSL : Lower specified limit. USL : Upper specified limit. Note : Each parameter measurement read-outs shall be made after stabilizing the components at room ambient for 2 hours minimum, 24 hours maximum after removal from the tests. And in case of the wetting tests, for example, moisture resistance tests, each component shall be made wipe or dry completely before the measurement. MS5F6137 7 13 Reli abili ty Test Resu l ts Test categorie s Number Reference Number of norms of test failure EIAJ ED-4701 sample (Aug.-2001 edition) sample Test Method 401 Method Test Method 402 method Test Method 403 Condition code B Test Method 404 Condition code B Test Method 201 Test Method 202 Test Method 103 Test code C Test Method 103 Test code E Test Method 105 Test Method 307 method Condition code A Test items Mechanical Tests 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 5 5 5 5 5 5 5 5 5 5 0 0 0 0 0 0 * 0 0 0 Environment Tests 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 Thermal Shock 1 High temperature Reverse Bias Test Method 101 5 5 5 5 * 0 * 0 Endurance Tests 2 High temperature Bias ( for gate ) 3 Temperature Humidity Bias 4 Intermitted Operating Life (Power cycling) ( for IGBT ) Test Method 101 Test Method 102 Condition code C Test Method 106 * under confirmation MS5F6137 8 13 Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 800 Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C/ chip 800 VGE=20V 15V 12V VGE=20V 15V Collector current : Ic [A] 400 10V Collector current : Ic [A] 600 600 12V 400 10V 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 800 Tj=25°C Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 Collector - Emitter voltage : VCE [ V ] 8 Collector current : Ic [A] 600 Tj=125°C 6 400 4 Ic=600A Ic=300A Ic=150A 200 2 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 1000.0 Dynamic Gate charge (typ.) Vcc=900V Ic=300A Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] 100.0 Cies 10.0 Coes 1.0 Cres VCE VGE 0.1 0 10 20 30 0 200 400 600 800 1000 Collector-Emitter voltage : VCE [V] Gate charge : Qg [nC] MS5F6137 9 13 Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5 , Tj= 25°C 10000 10000 Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5 , Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 ton toff tr tf 1000 toff ton tr 100 100 tf 10 0 100 200 300 400 500 600 Collector current : Ic [A] 10 0 100 200 300 400 500 600 Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10000 150 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5 Switching time : ton, tr, toff, tf [ nsec ] Eoff(125°C) 125 100 75 50 25 0 1000 ton toff tr Err(125°C) Eoff(25°C) Eon(125°C) Err(25°C) Eon(25°C) 100 tf 10 0.1 1.0 10.0 100.0 Gate resistance : RG [ ] 0 100 200 300 400 500 600 Collector current : Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.5 ,Tj