2MBI300U4N-170-50

2MBI300U4N-170-50 IGBT MODULE (U series) 1700V / 300A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Conditions Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1700 ±20 450 300 900 600 300 600 1385 150 -40 to +125 3400 3.5 4.5 Units V V Maximum Ratings and Characteristics Continuous 1ms 1ms 1 device A Collector power dissipation Junction temperature Storage temperature between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals ( *4) W °C VAC Nm AC : 1min. Note *1: All terminals should be connected together when isolation test will be done. Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*5) Thermistor Resistance B value Symbols I CES I GES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R lead R B Conditions VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, I C = 300mA VGE = 15V I C = 300A VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V I C = 300A VGE = ±15V RG = 1.5Ω VGE = 0V I F = 300A I F = 300A T=25°C T=100°C T=25/50°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics min. typ. max. 3.0 600 4.5 6.5 8.5 2.70 2.90 3.10 2.30 2.45 2.65 28 0.62 1.20 0.39 0.60 0.05 0.55 1.50 0.09 0.30 2.10 2.40 2.30 1.80 1.95 2.00 0.18 0.6 1.00 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs Inverter V µs mΩ Ω K Note *5: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) ( *6) Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound Characteristics min. typ. max. 0.09 0.15 0.0167 Units °C/W Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI300U4N-170-50 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 800 IGBT Modules Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C/ chip 800 Collector current : Ic [A] 400 10V Collector current : Ic [A] 600 VGE=20V 15V 12V 600 VGE=20V 15V 12V 400 10V 200 8V 0 0 1 2 3 4 5 200 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 800 Tj=25°C Collector current : Ic [A] 600 Tj=125°C 400 Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 8 6 4 Ic=600A Ic=300A Ic=150A 200 2 0 0 1 2 3 4 5 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Collector-Emitter voltage : VCE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 1000.0 Capacitance : Cies, Coes, Cres [ nF ] Dynamic Gate charge (typ.) Vcc=900V, Ic=300A, Tj= 25°C 100.0 Cies 10.0 Coes 1. 0 Cres 0. 1 0 10 20 30 Collector-Emitter voltage : VCE [V] VCE VGE 0 200 400 600 800 1000 Gate charge : Qg [nC] 2 2MBI300U4N-170-50 IGBT Modules Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5Ω, Tj=125°C 1000 ton t of f tr tf 1000 t of f ton tr tf 100 100 10 0 100 200 300 400 500 600 Collector current : Ic [A] 10 0 100 200 300 400 500 600 Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=±15V, Tj= 25°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10000 Switching time : ton, tr, toff, tf [ nsec ] 150 125 100 75 50 25 0 0 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.5Ω Eoff(125°C) 1000 ton t of f tr Err(125°C) Eoff(25°C) Eon(125°C) Err(25°C) Eon(25°C) 100 tf 10 0. 1 1. 0 10.0 100.0 Gate resistance : RG [Ω] 100 200 300 400 500 600 Collector current : Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=300A, VGE=±15V, Tj= 125°C 300 250 200 150 100 50 0 0. 1 1. 0 10.0 100.0 Gate resistance : RG [Ω] Err Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.5Ω ,Tj