2MBI300UC-120

2MBI300UC-120 IGBT MODULE (U series) 1200V / 300A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Ic pulse Conditions Maximum ratings 1200 ±20 400 300 800 600 300 600 1470 150 -40 to +125 2500 3.5 4.5 Units V V Continuous 1ms Tc=25°C Tc=80°C Tc=25°C Tc=80°C A -Ic -Ic pulse Collector power dissipation Pc Junction temperature Tj Storage temperature Tstg Isolation voltage Between terminal and copper base (*1) Viso Mounting (*2) Screw torque Terminals (*2) 1 device AC : 1min. W °C °C VAC N·m Note *1: All terminals should be connected together when isolation test will be done. Note *2: Recommendable value : Mounting : 2.5-3.5 N·m (M5 or M6), Terminals : 3.5-4.5 N·m (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Symbols ICES IGES VGE (th) VCE (sat) (teminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (teminal) VF (chip) trr R lead Conditions VGE = 0V, VCE = 1200V VCE = 0V, VGE = ±20V VCE = 20V, IC = 300mA VGE = 15V IC = 300A VGE Tj=25°C Tj=125°C Tj=25°C Tj=125°C = 0V, VCE = 10V, f = 1MHz Characteristics min. typ. max. 2.0 400 4.5 6.5 8.5 1.90 2.25 2.15 1.75 2.10 2.00 34 0.36 1.20 0.21 0.60 0.03 0.37 1.00 0.07 0.30 1.75 2.05 1.85 1.60 1.90 1.70 0.35 0.53 Units mA nA V V nF VCC = 600V IC = 300A VGE = ±15V RG = 1.1Ω Tj=25°C Tj=125°C Tj=25°C Tj=125°C µs Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*3) Note *3: Biggest internal terminal resistance among arm. VGE = 0V IF = 300A IF = 300A V µs mΩ Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound (*4) Characteristics min. typ. max. 0.085 0.14 0.025 Units °C/W Note *4: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI300UC-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj= 25°C / chip IGBT Modules 800 700 Collector current : Ic [A] 800 700 Collector current vs. Collector-Emitter voltage Tj= 125°C / chip Collector current : Ic [A] 600 500 400 300 200 100 0 0 1 VGE=20V 15V 12V 600 500 400 300 200 100 0 VGE=20V 15V 12V 10V 10V 8V 2 3 4 5 8V 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter voltage : VCE [V] 800 700 Collector current : Ic [A] 600 500 400 300 200 100 0 0 Collector current vs. Collector-Emitter voltage VGE=15V (typ.) / chip Collector - Emitter voltage : VCE [ V ] 10 Collector-Emitter voltage vs. Gate-Emitter voltage Tj=25°C / chip Tj=25°C Tj=125°C 8 6 4 Ic=600A Ic=300A Ic=150A 5 10 15 20 25 2 0 1 2 3 4 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] 100.0 Capacitance : Cies, Coes, Cres [ nF ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Cies Dynamic Gate charge (typ.) Vcc=600V , Ic=300A , Tj= 25°C 10.0 Cres VGE 1.0 Coes 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] VCE 0 300 600 900 1200 1500 1800 Gate charge : Qg [ nC ] 2 2MBI300UC-120 IGBT Modules 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25°C Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj=125°C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 100 200 300 400 500 600 Collector current : Ic [ A ] 10 0 100 200 300 400 500 600 Collector current : Ic [ A ] 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj= 25°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 60 50 40 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω Eoff(125°C) Eon(125°C) ton toff 1000 Eoff(25°C) 30 20 10 0 Eon(25°C) tr 100 tf Err(125°C) Err(25°C) 10 0.1 1.0 10.0 100.0 Gate resistance : Rg [ Ω ] 0 100 200 300 400 500 600 Collector current : Ic [ A ] 250 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=300A, VGE=±15V, Tj= 125°C Eon 800 700 Collector current : Ic [ A ] 600 500 400 300 200 100 Reverse bias safe operating area +VGE=15V,-VGE = 1.1Ω ,Tj