2MBI450U4N-170-50

2MBI450U4N-170-50 IGBT MODULE (U series) 1700V / 450A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure IGBT Modules Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Absolute Maximum Ratings (at Tc=25°C unless otherwise specified) Items Collector-Emitter voltage Gate-Emitter voltage Symbols VCES VGES Ic Collector current Icp -Ic -Ic pulse Pc Tj Tstg Conditions Tc=25°C Tc=80°C Tc=25°C Tc=80°C Maximum ratings 1700 ±20 600 450 1200 900 450 900 2080 150 -40 to +125 3400 3.5 4.5 Units V V Maximum Ratings and Characteristics Continuous 1ms 1ms 1 device A Collector power dissipation Junction temperature Storage temperature between terminal and copper base (*1) Isolation voltage Viso between thermistor and others (*2) Mounting (*3) Screw torque Terminals ( *4) W °C VAC Nm AC : 1min. Note *1: All terminals should be connected together when isolation test will be done. Note *2: Two thermistor terminals should be connected together, each other terminals should be connected together and shorted to base plate when isolation test will be done. Note *3: Recommendable value : Mounting : 2.5-3.5 Nm (M5) Note *4: Recommendable value : Terminals : 3.5-4.5 Nm (M6) Electrical characteristics (at Tj= 25°C unless otherwise specified) Items Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Turn-off time Forward on voltage Reverse recovery time Lead resistance, terminal-chip (*5) Thermistor Resistance B value Symbols I CES I GES VGE (th) VCE (sat) (terminal) VCE (sat) (chip) Cies ton tr tr (i) toff tf VF (terminal) VF (chip) trr R lead R B Conditions VGE = 0V, VCE = 1700V VCE = 0V, VGE = ±20V VCE = 20V, I C = 450mA VGE = 15V I C = 450A VCE = 10V, VGE = 0V, f = 1MHz VCC = 900V I C = 450A VGE = ±15V RG = 1.1Ω VGE = 0V I F = 450A I F = 450A T=25°C T=100°C T=25/50°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics min. typ. max. 3.0 600 4.5 6.5 8.5 2.80 3.05 3.20 2.25 2.45 2.65 42 0.62 1.20 0.39 0.60 0.05 0.55 1.50 0.09 0.30 2.25 2.55 2.45 1.80 1.95 2.00 0.18 0.6 1.00 5000 465 495 520 3305 3375 3450 Units mA nA V V nF µs Inverter V µs mΩ Ω K Note *5: Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance (1device) Contact thermal resistance (1device) ( *6) Symbols Rth(j-c) Rth(c-f) Conditions IGBT FWD with Thermal Compound Characteristics min. typ. max. 0.06 0.10 0.0167 Units °C/W Note *6: This is the value which is defined mounting on the additional cooling fin with thermal compound. 1 2MBI450U4N-170-50 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1200 1000 Collector current : Ic [A] 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 10V IGBT Modules Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C/ chip 1200 1000 Collector current : Ic [A] 800 600 10V 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V VGE=20V 15V 12V VGE=20V 15V 12V 8V Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1200 1000 Collector current : Ic [A] 800 Tj=125°C 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector - Emitter voltage : VCE [ V ] Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 Tj=25°C 8 6 4 Ic=900A Ic=450A Ic=225A 2 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 1000.0 Capacitance : Cies, Coes, Cres [ nF ] Dynamic Gate charge (typ.) Vcc=900V, Ic=450A, Tj= 25°C 100.0 Cies VCE VGE 10.0 Coes 1. 0 Cres 0. 1 0 10 20 30 Collector-Emitter voltage : VCE [V] 0 500 1000 1500 Gate charge : Qg [nC] 2 2MBI450U4N-170-50 IGBT Modules Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω, Tj=125°C 1000 ton t of f tr tf 1000 t of f ton tr tf 100 100 10 0 200 400 600 800 Collector current : Ic [A] 10 0 200 400 600 800 Collector current : Ic [A] Switching time vs. Gate resistance (typ.) Vcc=900V, Ic=450A, VGE=±15V, Tj= 25°C Switching loss : Eon, Eoff, Err [ mJ/pulse ] 10000 Switching time : ton, tr, toff, tf [ nsec ] 250 Switching loss vs. Collector current (typ.) Vcc=900V, VGE=±15V, Rg=1.1Ω 200 Eoff(125°C) 1000 ton t of f tr 150 Err(125°C) Eoff(25°C) Err(25°C) Eon(125°C) Eon(25°C) 100 100 tf 50 10 0. 1 1. 0 10.0 100.0 Gate resistance : RG [Ω] 0 0 200 400 600 800 1000 Collector current : Ic [A] Switching loss vs. Gate resistance (typ.) Vcc=900V, Ic=450A, VGE=±15V, Tj= 125°C 350 300 250 200 150 100 Err 50 0 0. 1 1. 0 10.0 100.0 Gate resistance : RG [Ω] Eon Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.1Ω ,Tj