2MBI50P-140

2MBI50P-140 IGBT Module P-Series 1400V / 50A 2 in one-package Features · Small temperature dependence of the turn-off switching loss · Easy to connect in parallel · Wide RBSOA (square up to 2 time of rated current) and high shortcircuit withstand capability · Low loss and soft-switching (reduction of EMI noise) Equivalent Circuit Schematic C1 E2 Applications · General purpose inverter · AC and DC Servo drive amplifier · Uninterruptible power supply C2E1 G1 E1 G2 E2 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device AC:1min. Rating 1400 ±20 75 50 150 100 50 100 400 +150 -40 to +125 2500 3.5 3.5 Unit V V A W °C VAC N·m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N·m(M5) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF t rr Conditions VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=50mA VGE=15V, IC=50A, Tj=25°C VGE=15V, IC=50A, Tj=125°C VCE=10V VGE=0V f=1MHz VCC=600V IC=50A VGE=±15V RG=24 Ω IF=50A, VGE=0V IF=50A Characteristics Min. Typ. – – – – 6.0 8.0 – 2.7 – 3.3 – 5000 – 750 – 330 – – – – – – – – – 2.4 – – Unit Max. 1.0 200 9.0 3.0 – – – – 1.20 0.60 1.00 0.30 3.3 0.35 mA nA V V pF µs V µs Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT Diode the base to cooling fin Characteristics Min. Typ. – – – – – 0.05 Unit Max. 0.31 0.66 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2 MBI50P-140 Characteristics (Representative) IGBT Module 2 MBI50P-140 IGBT Module 2 MBI50P-140 IGBT Module Outline Drawings, mm M232