2MBI600U2E-060

2MBI600U2E-060 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 600V / 600A 2 in one-package 2. Equivalent circuit Equivalent Circuit Schematic Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 650 ±20 600 1200 600 1200 2400 +150 -40 to +125 2500 3.5 4.5 Unit V V A Continuous 1ms Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device W °C VAC N·m AC:1min. *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5N·m(M5 or M6), Terminal 3.5 to 4.5 N·m(M6) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=600V VCE=0V, VGE=±20V VCE=20V, IC=600mA VGE=15V, IC=600A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =300V IC=600A VGE=±15V RG= 4.7 Ω VGE=0V IF=600A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 6.2 6.7 – 2.15 – 2.40 – 1.85 – 2.10 – 43 – 0.40 – 0.22 – 0.16 – 0.48 – 0.07 – 1.90 – 1.95 – 1.60 – 1.65 – – – 0.45 Unit Max. 3.0 600 7.7 2.45 – – – – 1.20 0.60 – 1.20 0.45 2.30 – – – 0.35 – mA nA V V Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=600A µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.0167 Unit Max. 0.052 0.086 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2MBI600U2E-060 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1400 1200 Collector current : Ic [A] 1000 10V 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 8V VGE=20V 15V 12V 1400 1200 Collector current : Ic [A] 1000 800 600 400 VGE=20V 15V IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 12V 10V 8V 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1400 1200 Collector current : Ic [A] 1000 800 600 400 200 0 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ] Tj=25°C Tj=125°C Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 8 6 4 Ic=1200A Ic=600A Ic=300A 2 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) Dynamic Gate charge (typ.) Vcc=300V, Ic=600A, Tj= 25°C 100.0 Cies Capacitance : Cies, Coes, Cres [ nF ] Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] 10.0 Cres Coes VGE 1.0 VCE 0 500 1000 1500 2000 2500 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 2MBI600U2E-060 IGBT Module Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=4.7Ω , Tj= 25°C 10000 10000 Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=4.7Ω , Tj=125°C Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 1000 toff 1000 ton toff tr ton 100 tr tf 100 tf 10 0 200 400 600 800 1000 10 0 200 400 600 800 1000 Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=600A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] 50 Switching loss vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=4.7Ω Eoff(125°C) Eon(125°C) 40 Eoff(25°C) Switching time : ton, tr, toff, tf [ nsec ] 1000 ton toff 100 tr 30 Eon(25°C) tf 20 10 Err(125°C) Err(25°C) 10 1.0 10.0 100.0 0 0 400 800 1200 Switching loss vs. Gate resistance (typ.) Vcc=300V, Ic=600A, VGE=±15V, Tj= 125°C 80 Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 1200 Collector current : Ic [ A ] 60 Reverse bias safe operating area (max.) +VGE=15V,-VGE = 4.7Ω ,Tj