2MBI75P-140
IGBT Module P-Series
1400V / 75A 2 in one-package
Features
· Small temperature dependence of the turn-off switching loss · Easy to connect in parallel · Wide RBSOA (square up to 2 time of rated current) and high shortcircuit withstand capability · Low loss and soft-switching (reduction of EMI noise)
Equivalent Circuit Schematic
C1 E2
Applications
· General purpose inverter · AC and DC Servo drive amplifier · Uninterruptible power supply
C2E1 G1 E1 G2 E2
Maximum ratings and characteristics
Absolute maximum ratings (at Tc=25°C unless otherwise specified)
Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions
Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C
Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2
1 device
AC:1min.
Rating 1400 ±20 100 75 200 150 75 150 600 +150 -40 to +125 2500 3.5 3.5
Unit V V A
W °C VAC N·m
*1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : 2.5 to 3.5 N·m(M5)
Electrical characteristics (at Tj=25°C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF t rr Conditions VGE=0V, VCE=1400V VCE=0V, VGE=±20V VCE=20V, IC=75mA VGE=15V, IC=75A, Tj=25°C VGE=15V, IC=75A, Tj=125°C VCE=10V VGE=0V f=1MHz VCC =600V IC=75A VGE=±15V RG=16 Ω IF=75A, VGE=0V IF=75A Characteristics Min. Typ. – – – – 6.0 8.0 – 2.7 – 3.3 – 7500 – 1000 – 500 – – – – – – – – – 2.4 – – Unit Max. 1.0 200 9.0 3.0 – – – – 1.20 0.60 1.00 0.30 3.3 0.35 mA nA V V pF
µs
V µs
Thermal resistance characteristics
Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT Diode the base to cooling fin Characteristics Min. Typ. – – – – – 0.05 Unit Max. 0.21 0.47 – °C/W °C/W °C/W
*4 : This is the value which is defined mounting on the additional cooling fin with thermal compound.
2 MBI75P-140
Characteristics (Representative)
IGBT Module
2 MBI75P-140
IGBT Module
2 MBI75P-140
IGBT Module
Outline Drawings, mm M232
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