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2MBI75S-120

2MBI75S-120

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    2MBI75S-120 - IGBT MODULE - Fuji Electric

  • 数据手册
  • 价格&库存
2MBI75S-120 数据手册
2MBI 75S-120 IGBT MODULE ( S-Series ) I Features • NPT-Technology • Square SC SOA at 10 x IC • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses And Soft Switching 2-Pack IGBT 1200V 2x75A I Outline Drawing I Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply I Maximum Ratings and Characteristics • Absolute Maximum Ratings ( Tc=25°C) Items Symbols Collector-Emitter Voltage VCES Gate -Emitter Voltage VGES Continuous 25°C / 80°C IC Collector 1ms IC PULSE 25°C / 80°C Current Continuous -IC 1ms -IC PULSE Max. Power Dissipation PC Operating Temperature Tj Storage Temperature Tstg Isolation Voltage A.C. 1min. Vis *1 Mounting *2 Screw Torque Terminals *2 Ratings 1200 ± 20 100 / 75 200 / 150 75 150 600 +150 -40 ∼ +125 2500 3.5 3.5 Units V I Equivalent Circuit A W °C V Nm Note: 1*: All Terminals should be connected together when isolation test will be done. 2*: Recommendable Value; 2.5 ∼ 3.5 Nm (M5) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr,x tr,i tOFF tf VF trr Turn-off Time Diode Forward On-Voltage Reverse Recovery Time Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=75mA Tj = 25°C VGE=15V IC=75A Tj =125°C VGE=0V VCE=10V f=1MHz VCC = 600V IC = 75A VGE = ±15V RG = 16Ω Inductive Load IF=75A; VGE=0V IF=75A Tj = 25°C Tj =125°C Min. Typ. 5.5 7.2 2.3 2.8 9’000 1’875 1’650 0.35 0.25 0.10 0.45 0.08 2.3 2.0 Max. 1.0 200 8.5 2.6 Units mA nA V pF 1.2 0.6 1.0 0.3 3.0 350 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.21 0.47 Units °C/W 0.05 2MBI 75S-120 2-Pack IGBT 1200V 2x75A 2MBI 75S-120 2-Pack IGBT 1200V 2x75A 2MBI 75S-120 2-Pack IGBT 1200V 2x75A Specification is subject to change without notice September 2000
2MBI75S-120 价格&库存

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