0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
2SJ472-01S

2SJ472-01S

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    2SJ472-01S - P-CHANNEL SILICON POWER MOSFET - Fuji Electric

  • 数据手册
  • 价格&库存
2SJ472-01S 数据手册
2SJ472-01L,S P-CHANNEL SILICON POWER MOSFET Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof FUJI POWER MOSFET FAP-III SERIES K-Pack(S) Outline Drawings K-Pack(L) Applications Switching regulators DC-DC converters General purpose power amplifier L-type EIAJ S-type Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy *1 Maximum power dissipation(Tc=25°C) Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV PD Tch Tstg Rating -30 ±5 ±20 ±16 191.8 15 +150 -55 to +150 Unit V A A V V W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=10.23mH, Vcc= -12V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions VGS=0V ID=1mA ID=1mA VDS=VGS VDS= -30V VGS=0V VGS=±16V VDS=0V ID= -2.5A ID=2.5A VDS= -25V VDS= -25V VGS=0V f=1MHz VCC= -12V RG=10 Ω ID= -5A VGS= -10V L=100μH Tch=25°C Min. -30 -1.0 Tch=25°C Tch=125°C VGS= -4V VGS= -10V 1.5 Typ. -1.5 -10 -0.2 10 480 210 3.0 250 150 85 10 20 25 20 -2.50 90 0.30 Max. -2.5 -500 -1.0 100 850 400 380 230 130 15 30 40 30 -3.8 Units V V μA mA nA mΩ mΩ S pF ns -5 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/μs Tch=25°C A V ns μC Thermal characteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 8.33 125.0 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics 2SJ472-01L,S 2 FUJI POWER MOSFET 2SJ472-01L,S 3 FUJI POWER MOSFET 2SJ472-01L,S 4
2SJ472-01S 价格&库存

很抱歉,暂时无法提供与“2SJ472-01S”相匹配的价格&库存,您可以联系我们找货

免费人工找货