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2SJ476-01L_06

2SJ476-01L_06

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    2SJ476-01L_06 - P-CHANNEL SILICON POWER MOSFET - Fuji Electric

  • 数据手册
  • 价格&库存
2SJ476-01L_06 数据手册
2SJ476-01L,S Features High speed switching Low on-resistance No secondary breakdown Low driving power High forward Transconductance Avalanche-proof FUJI POWER MOSFET P-CHANNEL SILICON POWER MOSFET FAP-III SERIES T-Pack(S) Outline Drawings T-Pack(L) Applications Switching regulators DC-DC converters General purpose power amplifier L-type EIAJ S-type Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy *1 Maximum power dissipation(Tc=25°C) Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV PD Tch Tstg Rating -60 ±25 ±100 ±20 325.9 50 +150 -55 to +150 Unit V A A V mJ W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=0.695mH, Vcc= -24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions VGS=0V ID=1mA ID=1mA VDS=VGS VDS= -60V VGS=0V VGS=±20V VDS=0V ID= -12.5A ID=12.5A VDS= -25V VDS= -25V VGS=0V f=1MHz VCC= -30V RG=10 Ω ID= -25A VGS= -10V L=100μH Tch=25°C Min. -60 -1.0 Tch=25°C Tch=125°C VGS= -4V VGS= -10V 7.5 Typ. -1.5 -10 -0.2 10 80 45 15.0 2000 700 450 15 80 190 90 -2 160 0.9 Max. -2.5 -500 -1.0 100 110 60 3000 1050 680 25 120 290 140 -3 Units V V μA mA nA mΩ mΩ S pF ns -25 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/μs Tch=25°C A V ns μC Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd/ Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 2.50 75 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics 2SJ476-01L,S 2 FUJI POWER MOSFET 2SJ476-01L,S 3 FUJI POWER MOSFET 2SJ476-01L,S 4
2SJ476-01L_06 价格&库存

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