2SK1088

2SK1088-M F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 150V 0,3Ω 9A 35W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Continous Reverse Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) I DR V GS PD T ch T stg Rating 150 9 36 9 ±20 35 150 -55 ~ +150 Unit V A A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Diode Forward On-Voltage Reverse Recovery Time Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t V t GSS DS(on) Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=4,5A VGS=4V ID=4,5A VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=9A VGS=10V RGS=25Ω IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C ID=4,5A Min. 150 1,0 Typ. 1,5 10 0,2 10 0,26 0,20 10 900 150 40 10 40 150 30 1,1 100 Max. 2,5 500 1,0 100 0,40 0,30 1200 230 60 15 60 230 45 1,5 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns V ns fs iss oss rss d(on) r d(off) f SD rr 5 - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 3,57 Unit °C/W °C/W FUJI ELECTRIC GmbH; Lyoner Straße 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56 N-channel MOS-FET 150V 0,3Ω 2SK1088-M F-III Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 9A 35W > Characteristics Typical Output Characteristics ↑ ID [A] 1 ↑ RDS(ON) [Ω] 2 ↑ ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(ON) [Ω] 4 ↑ gfs [S] 5 ↑ VGS(th) [V] 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode ↑ C [nF] 7 ↑ VDS [V] 8 ↑ VGS [V] ↑ IF [A] 9 VDS [V] → Qg [nC] → VSD [V] → Allowable Power Dissipation vs. TC Safe operation area ↑ Zth(ch-c) [K/W] Transient Thermal impedance ↑ PD [W] 10 ↑ ID [A] 12 11 Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice!