2SK2019-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
500V
3Ω
3,5A
40W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpose Power Amplifier
> Maximum Ratings and Characteristics
- Absolute Maximum Ratings (TC=25°C), unless otherwise specified
Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 500 500 3,5 14 ±30 40 150 -55 ~ +150 Unit V V A A V W °C °C
> Equivalent Circuit
- Electrical Characteristics (TC=25°C), unless otherwise specified
Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q
GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr
Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=1,5A VGS=10V ID=1,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=3,5A VGS=10V RGS=10 Ω Tch=25°C L = 100µH
Min. 500 2,5
Typ. 3,0 10 0,2 10 2,0 3,0 600 50 10 15 10 40 15
Max. 3,5 500 1,0 100 3,0 900 75 15 25 15 60 25 3,5 14 1,65
1,5
3,5
IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C
1,1 400 1,5
Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A A A V ns µC
- Thermal Characteristics Item Thermal Resistance
Symbol R th(ch-a) R th(ch-c)
Test conditions channel to air channel to case
Min.
Typ.
Max. 75 3,125
Unit °C/W °C/W
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
N-channel MOS-FET
500V
3Ω
2SK2019-01
FAP-IIA Series
Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics
3,5A
40W
> Characteristics
Typical Output Characteristics
↑
ID [A]
1
↑
RDS(ON) [Ω]
2
↑
ID [A]
3
VDS [V]
→
Tch [°C]
→
VGS [V]
→
Typical Drain-Source-On-State-Resistance vs. ID
Typical Forward Transconductance vs. ID
Gate Threshold Voltage vs. Tch
↑
RDS(ON) [Ω]
4
↑
gfs [S]
5
↑
VGS(th) [V]
6
ID [A]
→
ID [A]
→
Tch [°C]
→
Typical Capacitance vs. VDS
Typical Input Charge
Forward Characteristics of Reverse Diode
↑
C [nF]
7
↑
VDS [V]
8
↑
VGS [V]
↑
IF [A]
9
VDS [V]
→
Qg [nC]
→
VSD [V]
→
Allowable Power Dissipation vs. TC
Safe operation area
↑
Zth(ch-c) [K/W]
Transient Thermal impedance
↑
PD [W]
10
↑
ID [A]
12
11
Tc [°C]
→
VDS [V]
→
t [s]
→
This specification is subject to change without notice!
很抱歉,暂时无法提供与“2SK2019-01”相匹配的价格&库存,您可以联系我们找货
免费人工找货