2SK2048-S

2SK2048-L,S F-III Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance N-channel MOS-FET 30V 0,022Ω 35A 60W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 30 30 35 140 ±20 60 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=17,5A VGS=4V ID=17,5A VGS=10V ID=17,5A VDS=12V VDS=25V VGS=0V f=1MHz VCC=12V ID=35A VGS=10V RGS=25Ω Min. 30 1,0 Typ. 1,5 10 0,2 10 0,025 0,016 17 1750 800 400 25 100 300 180 Max. 2,5 500 1,0 100 0,037 0,022 2630 1200 600 38 150 450 270 35 140 2,0 8 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 1,35 100 0,5 Unit V V µA mA nA Ω Ω S pF pF pF ns ns ns ns A A V ns µC Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 125 2,08 Unit °C/W °C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 30V 0,022Ω 35A 2SK2048-L,S F-III Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 60W > Characteristics Typical Output Characteristics ↑ ID [A] 1 ↑ RDS(ON) [Ω] 2 ↑ ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(ON) [Ω] 4 ↑ gfs [S] 5 ↑ VGS(th) [V] 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode ↑ C [nF] 7 ↑ VDS [V] 8 ↑ VGS [V] ↑ IF [A] 9 VDS [V] → Qg [nC] → VSD [V] → Allowable Power Dissipation vs. TC Safe operation area ↑ Zth(ch-c) [K/W] Transient Thermal impedance ↑ PD [W] 10 ↑ ID [A] 12 11 Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice!