2SK2099-01L

2SK2099-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 0,85Ω 6A 20W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 6 24 ±30 20 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=3A VGS=10V ID=3A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=6A VGS=10V RGS=10 Ω Tch=25°C L = 100µH Min. 250 2,5 Typ. 3,0 10 0,2 10 0,6 3,0 400 75 20 20 20 40 10 Max. 3,5 500 1,0 100 0,85 600 110 30 30 30 60 15 6 24 1,5 1,5 6 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 1,0 120 0,6 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A A A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 6,25 Unit °C/W °C/W Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com N-channel MOS-FET 250V 0,85Ω 2SK2099-01L,S FAP-IIA Series Drain-Source-On-State Resistance vs. Tch Typical Transfer Characteristics 6A 20W > Characteristics Typical Output Characteristics ↑ ID [A] 1 ↑ RDS(ON) [Ω] 2 ↑ ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(ON) [Ω] 4 ↑ gfs [S] 5 ↑ VGS(th) [V] 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitance vs. VDS Typical Input Charge Forward Characteristics of Reverse Diode ↑ C [nF] 7 ↑ VDS [V] 8 ↑ VGS [V] ↑ IF [A] 9 VDS [V] → Qg [nC] → VSD [V] → Allowable Power Dissipation vs. TC Safe operation area ↑ Zth(ch-c) [K/W] Transient Thermal impedance ↑ PD [W] 10 ↑ ID [A] 12 11 Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice!