2SK2292-01S

2SK2292-01L,S FAP-IIA Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof N-channel MOS-FET 250V 1,1Ω 4A 20W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Drain-Gate-Voltage (RGS=20KΩ) Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS V DGR ID I D(puls) V GS PD T ch T stg Rating 250 250 4 16 ±30 20 150 -55 ~ +150 Unit V V A A V W °C °C > Equivalent Circuit - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Continous Reverse Drain Current Pulsed Reverse Drain Current Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I I I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV DR DRM SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=250V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=2,0A VGS=10V ID=2,0A VDS=25V VDS=25V VGS=0V f=1MHz VCC=150V ID=4A VGS=10V RGS=10 Ω Tch=25°C L = 100µH Min. 250 2,5 Typ. 3,0 10 0,2 10 0,8 2,0 230 70 45 10 20 25 10 Max. 3,5 500 1,0 100 1,1 350 110 70 15 30 40 15 4 8 1,5 1,0 4 IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C 1,0 110 0,5 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A A A V ns µC - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 62,5 Unit °C/W °C/W N-channel MOS-FET 250V 1,1Ω 2SK2292-01L,S FAP-IIA Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=2A; VGS=10V 4A 20W > Characteristics Typical Output Characteristics ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ 1 RDS(ON) [Ω ] ↑ 2 ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80µs pulse test; TC=25°C Typical Transconductance gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS ↑ RDS(ON) [Ω ] ↑ gfs [S] ↑ 5 VGS(th) [V] 4 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristics VGS=f(Qg); ID=4A Forward Characteristics of Reverse Diode IF=f(VSD); 80µs pulse test; VGS=0V ↑ C [nF] ↑ VDS [V] ↑ VGS [V] ↑ IF [A] 7 8 9 VDS [V] → Qg [nC] → VSD [V] → Power Dissipation PD=f(Tc) Safe Operation Area ID=f(VDS): D=0,01, Tc=25°C Zth(ch-c) [K/W] ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T ↑ PD[W] 10 ↑ ID [A] 12 Tch [°C] → VDS [V] → t [s] → This specification is subject to change without notice!