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2SK2687-01_05

2SK2687-01_05

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    2SK2687-01_05 - N-CHANNEL SILICON POWER MOSFET - Fuji Electric

  • 数据手册
  • 价格&库存
2SK2687-01_05 数据手册
2SK2687-01 Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings TO-220AB Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS EAV PD Tch Tstg Rating 30 ±50 ±200 ±16 520 60 +150 -55 to +150 Unit Remarks V A A V *1 mJ W °C °C *1 L=0.277mH, Vcc=12V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V VGS=±16V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS =25V VGS=0V f=1MHz VCC=15V RG=10 Ω ID=50A VGS=10V L=100µH Tch=25°C Min. 30 1.0 Tch=25°C Tch=125°C VGS=4V VGS=10V 22 Typ. 1.5 10 0.2 10 12 7.5 45 2750 1300 600 13 55 180 150 1.14 85 0.17 Max. 2.0 500 1.0 100 17 10 4130 1950 900 20 83 270 230 1.71 130 Units V V µA mA nA mΩ mΩ S pF ns A V ns µC 50 IF=2xIDR VGS=0V Tch=25°C IF=2xIDR VGS=0V -di/dt=100A/µs Tch=25°C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 2.08 75.0 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics 2SK2687-01 2 FUJI POWER MOSFET 2SK2687-01 3 FUJI POWER MOSFET 2SK2687-01 4
2SK2687-01_05 价格&库存

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