2SK2767-01

2SK2767-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings TO-220AB FAP-2S Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 ±3.5 ±14 ±35 3.5 258 80 +150 -55 to +150 Unit V A A V A mJ W °C °C < *2 Tch=150°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=38.6mH, Vcc=90V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=±35V VDS=0V ID=2.0A VGS=10V ID=2.0A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V RGS=10 Ω L=100 µH Tch=25°C IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -di/dt=100A/µs Tch=25°C 3.5 1.0 1000 5.0 1.5 Tch=25°C Tch=125°C Min. 900 3.5 Typ. 4.0 10 0.2 10 4.0 2.0 450 75 40 20 40 50 25 Max. 4.5 500 1.0 100 5.5 680 120 60 30 60 80 40 Units V V µA mA nA Ω S pF 1.0 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 75.0 Units °C/W °C/W 1 2SK2767-01 Characteristics Power Dissipation PD=f(Tc) FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25°C 100 90 80 70 10 1 t=0.01 µs 1µ s 10µs DC 100µs 60 PD [W] ID [A] 50 40 30 10 0 1ms 10ms 10 20 10 0 10 -2 -1 t D= T t T 100ms 0 50 100 150 10 0 10 1 10 2 10 3 Tc [ C] o VDS [V] Typical transfer characteristic ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C 10 1 ID [A] 10 0 10 -1 10 -2 0 1 2 3 4 5 6 7 8 9 10 VGS [V] Typical forward transconductance gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C 10 1 gfs [s] 10 0 10 -1 10 -1 10 0 10 1 ID [A] 2 2SK2767-01 FUJI POWER MOSFET 16 14 Drain-source on-state resistance RDS(on)=f(Tch):ID=2A,VGS=10V 6.0 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 5.0 12 4.0 10 max. typ. min. 3.0 RDS(on) [ Ω ] 8 6 max. VGS(th) [V] typ. 2.0 4 1.0 2 0 -50 0 50 100 150 o 0.0 -50 0 50 100 o 150 Tch [ C] Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=3.5A,Tch=25°C 800 Vcc=720V 700 600 500 400 300 200 180V 100 0 40 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz V 80 35 =1 cc 50V V4 0V 72 30 1n 25 VDS [V] 450V VGS [V] C [F] Ciss 20 15 100p 10 5 0 0 10 20 30 40 50 60 70 80 10p 10 Coss Crss -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Forward characteristic of reverse of diode IF=f(VSD):80µs Pulse test,VGS=0V 300 Avalanche energy derating Eas=f(starting Tch):Vcc=90V,IAV=3.5A 10 1 250 o Tch=25 C typ. IF [A] 0 200 10 Eas [mJ] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 150 100 10 -1 50 10 -2 0.0 0 0 50 o 100 150 VSD [V] Starting Tch [C] 3 2SK2767-01 FUJI POWER MOSFET 10 1 Transient thermal impedance Zthch=f(t) parameter:D=t/T 0 10 D=0.5 Zthch-c [K/W] 0.2 0.1 10 -1 0.05 0.02 0.01 0 10 -4 t D= T t T 10 -5 10 -2 10 -3 10 -2 10 -1 10 0 10 1 t [s] 4