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2SK2806-01_05

2SK2806-01_05

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    2SK2806-01_05 - N-CHANNEL SILICON POWER MOSFET - Fuji Electric

  • 数据手册
  • 价格&库存
2SK2806-01_05 数据手册
2SK2806-01 Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings TO-220AB Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS EAV PD Tch Tstg Rating 30 ±35 ±140 ±16 129.3 30 +150 -55 to +150 Unit Remarks V A A V *1 mJ W °C °C *1 L=0.70mH, Vcc=12V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V VGS=±16V VDS=0V ID=17.5A VGS=10V ID=17.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=15V RG=10 Ω ID=35A VGS=10V L=100µH Tch=25°C Min. 30 1.0 Tch=25°C Tch=125°C VGS=4V VGS=10V 16 Typ. 1.5 10 0.2 10 22 14 33 1100 550 240 9 15 75 50 0.98 50 0.08 Max. 2.0 500 1.0 100 30 20 1650 830 360 15 23 115 75 1.71 Units V V µA mA nA mΩ mΩ S pF ns A V ns µC 35 IF=2xIDR VGS=0V Tch=25°C IF=2xIDR VGS=0V -di/dt=100A/µs Tch=25°C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 4.16 75.0 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics 2SK2806-01 2 FUJI POWER MOSFET 2SK2806-01 3 FUJI POWER MOSFET 2SK2806-01 4
2SK2806-01_05 价格&库存

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