2SK2806-01
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof
FUJI POWER MOSFET
200509
N-CHANNEL SILICON POWER MOSFET
FAP-IIIB SERIES
Outline Drawings
TO-220AB
Applications
Switching regulators DC-DC converters General purpose power amplifier
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS EAV PD Tch Tstg Rating 30 ±35 ±140 ±16 129.3 30 +150 -55 to +150 Unit Remarks V A A V *1 mJ W °C °C *1 L=0.70mH, Vcc=12V
Equivalent circuit schematic
Drain(D)
Gate(G)
Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=30V VGS=0V VGS=±16V VDS=0V ID=17.5A VGS=10V ID=17.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=15V RG=10 Ω ID=35A VGS=10V L=100µH Tch=25°C
Min.
30 1.0 Tch=25°C Tch=125°C VGS=4V VGS=10V 16
Typ.
1.5 10 0.2 10 22 14 33 1100 550 240 9 15 75 50 0.98 50 0.08
Max.
2.0 500 1.0 100 30 20 1650 830 360 15 23 115 75 1.71
Units
V V µA mA nA mΩ mΩ S
pF
ns A V ns µC
35
IF=2xIDR VGS=0V Tch=25°C IF=2xIDR VGS=0V -di/dt=100A/µs Tch=25°C
Thermal characteristics
Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a)
Min.
Typ.
Max.
4.16 75.0
Units
°C/W °C/W
1
FUJI POWER MOSFET
Characteristics
2SK2806-01
2
FUJI POWER MOSFET
2SK2806-01
3
FUJI POWER MOSFET
2SK2806-01
4
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