2SK2870-01S

2SK2870-01L,S FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 450V 1,2Ω ±8A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Repatitive or non-repatitive Max. Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS I AV E AV PD T ch T stg Rating 450 ±8 ±32 ±35 8 215.9 50 150 -55 ~ +150 L=6.19mH,Vcc=45V > Equivalent Circuit Unit V A A V A mJ W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge - Thermal Characteristics Item Thermal Resistance Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=450V Tch=25°C VGS=0V Tch=125°C VGS=±35V VDS=0V ID=4A VGS=10V ID=4A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=8A VGS=10V RGS=10 Ω Tch=25°C L = 6,19mH IF=2xIDR VGS=0V Tch=25°C IF=IDR VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 450 3,5 Typ. 4,0 10 0,2 10 1,0 4 540 100 45 13 40 45 25 1,10 450 3,7 Max. 4,5 500 1,0 100 1,2 810 150 70 20 60 70 40 1,65 120 2 8 Unit V V µA mA nA Ω S pF pF pF ns ns ns ns A V ns µC Symbol R th(ch-c) R th(ch-a) Test conditions channel to case channel to air Min. Typ. Max. 2,5 125,0 Unit °C/W °C/W N-channel MOS-FET 450V 1,2Ω 2SK2870-01L,S FAP-IIS Series Drain-Source-On-State Resistance vs. Tch RDS(on) = f(Tch): ID=4A; VGS=10V ±8A 50W > Characteristics Typical Output Characteristics ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ 1 RDS(ON) [Ω ] ↑ 2 ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source-On-State-Resistance vs. ID RDS(on)=f(ID); 80µs pulse test;TC=25°C Typical Forward Transconductance vs. ID gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS ↑ RDS(ON) [Ω ] ↑ gfs [S] ↑ 5 VGS(th) [V] 4 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg): ID=8A; Tc=25°C Forward Characteristics of Reverse Diode IF=f(VSD); 80µs pulse test; VGS=0V ↑ C [F] ↑ VDS [V] ↑ VGS [V] ↑ IF [A] 7 8 9 VDS [V] → Qg [nC] → VSD [V] → Avalanche Energy Derating Eas=f(starting Tch): Vcc=45V; IAV Characteristics Power Dissipation PD=f(TC) 125 100 → 75 PD / PDmax [%] 50 25 0 0 0 0 0 TC [°C] 0 0 0 This specification is subject to change without notice!