2SK2895-01
FAP-IIIB Series
FUJI POWER MOSFET
200511
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-220AB
Features
High speed switching Low on-resistance No secondary breadown Low driving power
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Equivalent circuit schematic Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum avalanche energy Maximum power dissipation Operating and storage Temperature range Symbol V DS ID ID p VGS EAV *1 PD Tch Tstg Ratings 60 ±45 ±180 ±20 461.9 60 +150 -55 to +150 Unit V A A V mJ W °C °C
Drain(D)
Gate(G) Source(S)
*1 L=0.304mH, Vcc=24V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol BVDSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID= 1mA VGS=0V ID= 1mA VDS=VGS VDS =60V VGS=0V VGS=±20V VDS=0V ID=22.5A ID=22.5A VDS =25V VGS=0V f=1MHz VCC=30V ID=45A VGS=10V RGS=10 Ω L=100μH Tch=25°C IF=45A VGS=0V Tch=25°C IF=45A VGS=0V -di/dt=100A/μs Tch=25°C VDS=25V Tch=25°C Tch=125°C VGS=4V VGS=10V
Min.
60 1.0
Typ.
Max.
Units
V V μA mA nA mΩ S pF
1.5 2.0 10 500 0.2 1.0 10 100 15 20 10 12 15.0 35.0 2900 4350 930 1400 260 390 13 30 35 50 190 290 75 140 45 0.95 1.43 55 0.10
ns
A V ns μC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
2.08 75.0
Units
°C/W °C/W
http://www.fujielectric.co.jp/fdt/scd/
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2SK2895-01
Characteristics
FUJI POWER MOSFET
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2SK2895-01
FUJI POWER MOSFET
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2SK2895-01
FUJI POWER MOSFET
http://www.fujielectric.co.jp/fdt/scd/
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