2SK2897-01

2SK2897-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,02Ω ±45A 40W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 ±45 ±185 ±20 461.9 40 150 -55 ~ +150 L=0.304mH,Vcc=24V Unit V A A V mJ* W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±20V VDS=0V ID=22,5A VGS=4V ID=22,5A VGS=10V ID=22,5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=45A RGS=10 Ω Tch=25°C L = 100µH IF=45A VGS=0V Tch=25°C IF=45A VGS=0V -dI/dt=100A/µs Tch=25°C Min. 60 1,0 Typ. 1,5 10 0,2 10 15 Max. 2,0 500 1,0 100 20 10 15 35 2900 930 260 13 35 190 75 0,95 55 0,10 12 4350 1400 390 30 50 290 140 1,43 45 Unit V V µA mA nA mΩ mΩ S pF pF pF ns ns ns ns A V ns µC - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min. Typ. Max. 3,125 62,5 Unit °C/W °C/W N-channel MOS-FET 60V 2SK2897-01 FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=22,5A; VGS=10V 0,02Ω ±45A 40W > Characteristics Typical Output Characteristics ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ 1 RDS(ON) [mΩ ] ↑ 2 ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80µs pulse test; TC=25°C Typical Forward Transconductance vs. ID gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS ↑ RDS(ON) [mΩ ] ↑ gfs [S] ↑ 5 VGS(th) [V] 4 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=45A; TC=25°C Forward Characteristics of Reverse Diode IF=f(VSD); 80µs pulse test; Tch=25°C ↑ C [F] ↑ VDS [V] ↑ VGS [V] ↑ IF [A] 7 8 9 VDS [V] → Qg [nC] → VSD [V] → Maximum Avalanche Energy vs. starting Tch Eas=f(starting Tch): VCC=24V; IAV ≤ 45A Safe Operation Area ID=f(VDS): D=0,01, Tc=25°C Transient Thermal impedance ↑ EAV [mJ] 10 ↑ ID [A] 12 ↑ Zth(ch-c) [K/W] Zthch=f(t) parameter:D=t/T starting Tch [°C] → VDS [V] → t [s] → This specification is subject to change without notice! N-channel MOS-FET 60V 0,02Ω ±45A 2SK2897-01 FAP-IIIB Series Typical Switching Characteristics t=f(ID): VCC = 30V, VGS = 10V, RG = 10Ω 40W > Characteristics t [ns] VSD [V] → Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [°C] 100 125 150 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [°C] 100 125 150 This specification is subject to change without notice!