2SK2897-01MR_05

2SK2897-01MR Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings TO-220F Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 ±45 ±180 ±20 461.9 40 +150 -55 to +150 Unit Remarks V A A V *1 mJ W °C °C *1 L=0.304mH, Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V VGS=0V VGS=±20V VDS=0V ID=22.5A VGS=10V ID=22.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=10 Ω ID=45A VGS=10V L=100µH Tch=25°C Min. 60 1.0 Tch=25°C Tch=125°C VGS=4V VGS=10V 15 Typ. 1.5 10 0.2 10 15 10 35 2900 930 260 13 35 190 75 0.95 55 0.10 Max. 2.0 500 1.0 100 20 12 4350 1400 390 30 50 290 140 1.43 Units V V µA mA nA mΩ mΩ S pF ns A V ns µC 45 IF=45A VGS=0V Tch=25°C IF=45A -di/dt=100A/µs Tch=25°C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 3.125 62.5 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics 2SK2897-01MR 2 FUJI POWER MOSFET 2SK2897-01MR 3 FUJI POWER MOSFET 2SK2897-01MR www.fujielectric.co.jp/fdt/scd 4