2SK2899-01R

2SK2899-01R Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings TO-3PF Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 ±100 ±400 ±20 1268.3 125 +150 -55 to +150 Unit Remarks V A A V *1 mJ W °C °C *1 L=0.169mH, Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V VGS=0V VGS=±20V VDS=0V ID=50A VGS=10V ID=50A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=10 Ω ID=100A VGS=10V L=100µH Tch=25°C Min. 60 1.0 Tch=25°C Tch=125°C VGS=4V VGS=10V 40 Typ. Max. Units V V µA mA nA mΩ mΩ S 1.5 2.0 10 500 0.2 1.0 10 100 7.0 11.0 5.0 6.5 80 6700 10050 2100 3150 570 860 20 30 160 300 410 620 330 500 1.0 85 0.21 1.5 pF ns A V ns µC 100 IF=100A VGS=0V Tch=25°C IF=50A -di/dt=100A/µs Tch=25°C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 1.0 30.0 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics 2SK2899-01R 2 FUJI POWER MOSFET 2SK2899-01R 3 FUJI POWER MOSFET 2SK2899-01R www.fujielectric.co.jp/fdt/scd 4