2SK3219-01MR

2SK3219-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 150 ±40 ±160 ±30 387 2.0 70 +150 -55 to +150 Unit V A A V mJ W W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=420µH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=150V VGS=0V VGS=±30V VDS=0V ID=20A VGS=10V ID=20A VDS=25V VDS =25V VGS =0V f=1MHz VCC=48V ID=40A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=40A VGS=0V Tch=25°C IF=40A VGS=0V -di/dt=100A/µs Tch=25°C 40 0.97 180 1.30 1.46 Min. 150 2.5 Tch=25°C Tch=125°C Typ. 3.0 1 0.1 10 37 25.0 2650 550 240 21 95 115 60 Max. 3.5 100 0.5 100 43 3980 830 360 32 142 173 90 Units V V µA mA nA mΩ S pF 12.5 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.79 62.5 Units °C/W °C/W 1 2SK3218-01 Characteristics Power Dissipation PD=f(Tc) 80 10 FUJI POWER MOSFET Safe operating area ID=f(VDS):Single Pulse(D=0),Tc=25°C 3 70 t= 1µs 2 60 10 10µs D.C. 50 100µs PD [W] ID [A] 40 10 1 1ms 30 10ms 20 10 0 t D= t T 100ms 10 T 0 0 25 50 75 100 125 150 10 -1 10 -1 10 0 10 1 10 2 10 3 Tc [°C] VDS [V] Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C 100 15V VGS=20V 10V 80 7.0V 6.5V 60 6.0V 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C ID [A] 5.5V 40 5.0V 20 4.5V ID [A] 0 0 1 2 3 4 5 10 1 0.1 0 2 4 6 8 10 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 10 2 Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 0.12 VGS= 4.5V 0.10 5.0V 5.5V 6.0V 10 1 0.08 RDS(on) [ Ω ] 6.5V 7.0V 0.06 10V 15V 20V 0.04 gfs [s] 10 0 0.02 10 -1 0.00 -1 10 10 0 10 1 10 2 0 20 40 60 80 100 120 ID [A] ID [A] 2 2SK3218-01 Drain-source on-state resistance RDS(on)=f(Tch):ID=20A,VGS=10V 120 5.0 4.5 100 4.0 3.5 80 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. 3.0 RDS(on)[m Ω ] VGS(th) [V] typ. 2.5 2.0 1.5 1.0 min. 60 max. typ. 40 20 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz 100n 150 Typical Gate Charge Characteristics VGS=f(Qg):ID=40A,Tch=25°C 30 125 VDS 25 VGS 10n 100 Vcc=120V 20 VGS [V] VDS [V] C [F] 75V 75 15 30V Ciss 1n Coss 50 10 25 Crss 5 100p -2 10 10 -1 10 0 10 1 10 2 0 0 20 40 60 80 100 120 140 160 180 0 200 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80µs pulse test,Tch=25°C 100 90 80 70 10 60 10 Typical Switching Characteristics vs. ID t=f(ID):Vcc=48V,VGS=10V,RG=10 Ω 4 3 -ID [A] t [ns] 50 40 30 20 10 0 0.0 10V 5V VGS=0V td(off) 10 2 tf tr td(on) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 1 VSD [V] 10 0 10 1 10 2 ID [A] 3 2SK3218-01 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive 50 45 40 35 FUJI POWER MOSFET Transient Thermal Impedance Zth(ch-c)=f(t):D=t/T 10 1 10 0 D=0.5 0.2 Zth(ch-c) [°C/W] 0.1 10 -1 30 0.05 0.02 0.01 I(AV) [A] 25 20 15 10 5 0 10 -2 t 0 T D= t T 10 0 25 50 75 100 125 150 -3 10 Starting Tch [°C] -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 500 Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V,I