2SK3262-01MR

2SK3262-01MR N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220F15 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 2.54 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS Continuous drain current ID Pulsed drain current ID(puls] Gate-source voltage VGS Maximum Avalanche Energy EAV *1 Max. power dissipation Ta=25°C PD Tc=25°C PD Operating and storage Tch temperature range Tstg Rating 200 ±20 ±80 ±20 355 2 45 +150 -55 to +150 Unit V A A V mJ W W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=1.6mH, Vcc=24V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=200V VGS=0V VGS=±20V VDS=0V ID=10A VGS=4V ID=10A VGS=10V ID=10A VDS=25V VDS =25V VGS =0V f=1MHz VCC=100V ID=20A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=20A VGS=0V Tch=25°C IF=20A VGS=0V -di/dt=100A/µs Tch=25°C 20 0.93 250 2.90 1.40 Min. 200 1.0 Tch=25°C Tch=125°C Typ. 1.5 10 0.2 10 110 85 19.0 1700 290 185 10 45 225 120 Max. 2.0 500 0.5 100 150 100 2550 435 280 15 70 340 180 Units V V µA mA nA mΩ S pF 9.0 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.78 62.5 Units °C/W °C/W 1 2SK3262-01MR Characteristics Power Dissipation PD=f(Tc) 50 10 2 FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25°C 40 D.C. 10 30 1 t= 1µs 10µs 100µs PD [W] 1ms 20 ID [A] 10 0 10ms t 10 T D= t T 100ms 0 0 50 100 150 10 -1 10 0 10 1 10 2 10 3 Tc [°C] VDS [V] Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C 50 VGS=20V 15V 100 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C 10V 40 5.0V 4.5V 4.0V 10 30 ID [A] 3.5V 20 3.0V 10 1 0 0 1 2 3 4 5 6 ID [A] 0.1 0 1 2 3 4 5 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 10 2 Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 0.22 0.20 0.18 0.16 VGS= 3.0V 3.5V 10 1 4.0V 0.14 4.5V RDS(on) [Ω ] gfs [s] 0.12 0.10 0.08 5.0V 10V 15V 20V 10 0 0.06 0.04 0.02 -1 10 10-1 0.00 10 0 10 1 10 2 0 10 20 30 40 50 60 ID [A] ID [A] 2 2SK3262-01MR Drain-source on-state resistance RDS(on)=f(Tch):ID=10A,VGS=10V 300 3.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA 250 2.5 200 2.0 max. RDS(on)[m Ω] 150 max. VGS(th) [V] 1.5 typ. typ. 100 1.0 min. 50 0.5 0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] Typical capacitances C=f(VDS):VGS=0V,f=1MHz 100n 200 180 Typical Gate Charge Characteristics VGS=f(Qg):ID=20A,Tch=25°C 20 18 VDS 160 140 VGS 16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 160 180 200 10n 120 Vcc=160V 100V 40V VGS [V] VDS [V] Ciss 1n Coss Crss 100p 10 -2 C [F] 100 80 60 40 20 0 10 -1 10 0 10 1 10 2 VDS [V] Qg [nC] Typical Forward Characteristics of Reverse Diode -ID=f(VSD):80µs pulse test,Tch=25°C 50 25 Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch),Non Repetitive 40 20 30 15 I(AV) [A] 20 10 10 10V 5 VGS=0V 0 0.0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 25 50 75 100 125 150 -ID [A] VSD [V] Starting Tch [°C] 3 2SK3262-01MR Maximum Avalanche energy vs. starting Tch Eas=f(starting Tch):Vcc=24V,I