2SK3271-01

2SK3271-01 Trench Gate MOSFET > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 6,5mΩ ±100A 155W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25°C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) VGS E AV PD T ch T stg Rating 60 ±100 ±400 +30 /-20 490.4 155 150 -55 ~ +150 * L=0,65.4uH, VCC=24V > Equivalent Circuit Unit V A A V mJ* W °C °C - Electrical Characteristics (TC=25°C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V Tch=25°C VGS=0V Tch=125°C VGS=±30V VDS=0V ID=40A VGS=40V ID=40A VDS=10V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=80A RGS=10 Ω Tch=25°C L = 100µH IF=80A VGS=0V Tch=25°C IF=50A VGS=0V -dIF/dt=100A/µs Tch=25°C Min. 60 2,5 Typ. 3,0 1,0 10,0 10 5,0 50 9000 1250 700 50 200 150 135 1,0 85 0,25 Max. 3,5 100,0 500,0 100 6,5 Unit V V µA µA nA mΩ S pF pF pF ns ns ns ns A V ns µC fs iss oss rss d(on) r d(off) f AV SD rr rr 25 100 1,5 - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to ambient channel to case Min. Typ. Max. 35,0 0,806 Unit °C/W °C/W N-channel MOS-FET 60V 6,5mΩ ±80A 135W 2SK3271-01 Trench Gate MOSFET Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=25A; VGS=10V > Characteristics Typical Output Characteristics ID=f(VDS); 80µs pulse test; TC=25°C Typical Transfer Characteristics ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C ↑ ID [A] ↑ 1 RDS(ON) [mΩ ] ↑ 2 ID [A] 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80µs pulse test; TC=25°C Typical Forward Transconductance vs. ID gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS ↑ RDS(ON) [mΩ ] ↑ gfs [S] ↑ 5 VGS(th) [V] 4 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=80A; Tch=25°C Forward Characteristics of Reverse Diode IF=f(VSD); 80µs pulse test; Tch=25°C ↑ C [F] ↑ VDS [V] ↑ VGS [V] ↑ IF [A] 7 8 9 VDS [V] → Qg [nC] → VSD [V] → Maximum Avalanche Energy vs. starting Tch EAV=f(starting Tch): VCC=24V; IAV ≤ 80A Safe Operation Area ID=f(VDS): D=0,01, Tc=25°C Zth(ch-c) [K/W] ↑ Transient Thermal impedance Zthch=f(t) parameter:D=t/T ↑ EAV [mJ] 10 ↑ ID [A] 12 starting Tch [°C] → VDS [V] → t [s] → This specification is subject to change without notice!