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2SK3362-01

2SK3362-01

  • 厂商:

    FUJI(富士电机)

  • 封装:

  • 描述:

    2SK3362-01 - N-CHANNEL SILICON POWER MOSFET - Fuji Electric

  • 数据手册
  • 价格&库存
2SK3362-01 数据手册
2SK3362-01 Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIIB SERIES Outline Drawings TO-220AB Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source peak voltage Maximum avalanche energy Maximum power dissipation Operating and storage temperature range Symbol V DS ID ID[puls] VGS EAV PD Tch Tstg Rating 60 ±50 ±200 ±20 867 80 +150 -55 to +150 Unit Remarks V A A V *1 mJ W °C °C *1 L=0.463mH, Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V VGS=0V VGS=±20V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS =25V VGS=0V f=1MHz VCC=30V RG=10 Ω ID=75A VGS=10V L=100µH Tch=25°C Min. 60 1.0 Tch=25°C Tch=125°C VGS=4V VGS=10V 25 Typ. 1.5 10 0.2 10 12 7.5 55 3500 1250 360 15 75 190 110 1.15 75 0.17 Max. 2.0 500 1.0 100 17 10 5250 1870 540 23 120 285 165 1.65 120 Units V V µA mA nA mΩ mΩ S pF ns A V ns µC 50 IF=160A VGS=0V Tch=25°C IF=80A -di/dt=100A/µs Tch=25°C Thermal characteristics Item Thermal resistance www.fujielectric.co.jp/fdt/scd Symbol Rth(ch-c) Rth(ch-a) Min. Typ. Max. 1.56 75.0 Units °C/W °C/W 1 FUJI POWER MOSFET Characteristics 2SK3362-01 2 FUJI POWER MOSFET 2SK3362-01 3 FUJI POWER MOSFET 2SK3362-01 www.fujielectric.co.jp/fdt/scd 4
2SK3362-01 价格&库存

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