2SK3364-01

2SK3364-01 N-CHANNEL SILICON POWER MOS-FET Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOS-FET TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 3. Source Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls) VGS EAV *1 PD Tch Tstg Rating 60 ± 50 ±200 ±30 867 80 +150 -55 to +150 *1 L=0.463mH, Unit V A A V mJ W °C °C Vcc=24V Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV VSD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS V DS=60V VGS=0V VGS=±30V VDS=0V ID=40A VGS=10V ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=80A VGS=10V RGS=10 Ω L=100µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C 50 1.0 70 0.13 1.5 Min. 60 2.5 Tch=25°C Tch=125°C Typ. 3.0 10 0.2 10 9.5 40 3100 1300 350 20 85 88 65 Max. 3.5 500 1.0 100 12 4650 1950 530 30 120 130 120 Units V V µA mA nA mΩ S pF 20 ns A V ns µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 75.0 Units °C/W °C/W 1 2SK3364-01 Characteristics Power Dissipation PD=f(Tc) 100 FUJI POWER MOSFET Safe operating area ID=f(VDS):D=0.01,Tc=25°C 80 10 2 t= 1µs 10µs D.C. 60 100µs PD [W] ID [A] 40 10 1 1ms 10ms t 20 10 0 D= T t T 100ms 0 0 25 50 75 100 125 150 10 0 10 1 10 2 Tc [ C] o VDS [V] Typical output characteristics ID=f(VDS):80µs pulse test,Tc=25°C 200 Typical transfer characteristics ID=f(VGS):80µs pulse test,VDS=25V,Tch=25°C VGS=20V 150 10V 8V 6.0V 100 ID [A] ID [A] 100 5.5V 10 5.0V 50 1 4.5V 4.0V 3.5V 0 0 1 2 3 4 5 0.1 0 2 4 6 8 10 VDS [V] VGS [V] Typical forward transconductance gfs=f(ID):80µs pulse test,VDS=25V,Tch=25°C 10 3 Typical Drain-Source on-State Resistance RDS(on)=f(ID):80µs pulse test,Tch=25°C 50 VGS= 3.5V 4.0V 4.5V 5.0V 5.5V 40 10 2 RDS(on) [mΩ ] 30 gfs [s] 6V 20 10 1 10 8V 10V 20V 10 0 0 10 0 10 1 10 2 10 3 0 50 100 150 200 ID [A] ID [A] 2 2SK3364-01 Drain-source on-state resistance RDS(on)=f(Tch):ID=40A,VGS=10V 30 5.0 4.5 25 4.0 3.5 20 3.0 FUJI POWER MOSFET Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=10mA max. max. typ. 2.5 min. 2.0 1.5 1.0 RDS(on)[m Ω ] 15 10 typ. 5 0.5 0 -50 0 50 100 150 0.0 -50 -25 0 25 50 75 100 125 150 VGS(th) [V] Tch [°C] Tch [°C] 50 Typical Gate Charge Characteristics VGS=f(Qg):ID=80A,Tch=25°C VDS Typical capacitances C=f(VDS):VGS=0V,f=1MHz 25 100n 40 VGS 20 10n 30 VDS [V] Vcc=48V 30V 12V 15 VGS [V] C [F] Ciss 20 10 1n Coss 10 5 Crss 0 0 20 40 60 80 100 120 140 0 100p 10 -2 10 -1 10 0 10 1 10 2 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs pulse test,Tch=25°C 200 180 160 140 10 120 10 4 Typical Switching Characteristics vs. ID t=f(ID):Vcc=30V,VGS=10V,RG=10 Ω 3 IF [A] 100 80 t [ns] td(off) 10 2 tf 60 40 20 10V 5V VGS=0V tr td(on) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 1 0 1 2 0.0 10 10 10 VSD [V] ID [A] 3 2SK3364-01 FUJI POWER MOSFET Maximum Avalanche Current vs. starting Tch I(AV)=f(starting Tch) 60 10 1 Transient thermal impedance Zthch=f(t) parameter:D=t/T 50 0 10 D=0.5 40 Zthch-c [K/W] 0.2 0.1 10 -1 I(AV) [A] 0.05 0.02 0.01 t D= T t T 30 20 10 -5 10 10 -2 0 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t [s] 0 0 25 50 75 100 125 150 starting Tch [°C] Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=24V,I(AV)