2SK3451-01MR

2SK3451-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 600 ±13 ±52 ±30 13 216.7 20 5 2.16 80 +150 Operating and storage Tch -55 to +150 temperature range Tstg Isolation Voltage VISO *4 2 < *1 L=2.36mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch=150°C < < *3 IF< D, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 t=60sec, f=60Hz =-I Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS /dt dV/dt *3 PD Ta=25°C Tc=25°C Unit V A A V A mJ kV/µs kV/µs W °C °C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=600V VGS=0V VDS=480V VGS=0V VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 Ω VCC =300V ID=12A VGS=10V L=2.36mH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C Min. 600 3.0 Typ. Max. 5.0 25 250 100 0.65 Units V V µA nA Ω S pF 10 0.50 5.5 11 1600 2400 160 240 7 10.5 18 27 16 24 35 50 8 15 34 51 12.5 19 11.5 17.5 13 1.00 1.50 0.75 6.5 ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.56 58.0 Units °C/W °C/W 1 2SK3451-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 90 80 70 60 50 40 30 500 450 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=60V IAS=6A 400 350 300 IAS=8A EAS [mJ] 0 25 50 75 100 125 150 PD [W] 250 200 150 IAS=13A 20 10 0 100 50 0 0 25 50 75 100 125 150 Tc [°C] starting Tch [°C] Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 30 28 26 24 22 20 20V 10V 8V 7.5V Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 10 ID [A] 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 VGS=6.5V 7.0V ID[A] 1 0.1 0 18 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 1.4 1.3 1.2 1.1 1.0 10 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS=6.5V 7.0V RDS(on) [ Ω ] 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 7.5V 8V 10V 20V gfs [S] 1 0.1 0.1 1 10 0.0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 ID [A] ID [A] 2 2SK3451-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 2.0 1.8 1.6 1.4 7.0 6.5 6.0 5.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA max. 5.0 VGS(th) [V] RDS(on) [ Ω ] 4.5 4.0 3.5 3.0 min. 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 0 25 50 75 100 125 150 max. typ. 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 Tch [° C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25°C 24 22 20 18 300V 16 14 480V Vcc= 120V 1n 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] C [F] 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 100p Coss 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 t=f(ID):Vcc=300V, VGS=10V, RG=10Ω Typical Switching Characteristics vs. ID 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 VSD [V] 1.25 1.50 1.75 2.00 10 0 10 1 ID [A] 3 2SK3451-01MR Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=60V Avalanche Current I AV [A] Single Pulse 1 10 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] http://www.fujielectric.co.jp/denshi/scd/ 4