2SK3468-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings
TO-220AB
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Symbol Ratings Unit V V DS 500 A ID ±12 A ID(puls] ±48 V VGS ±30 A IAR *2 12 mJ EAS *1 217 kV/µs dVDS /dt 20 dV/dt *3 5 kV/µs PD Ta=25°C 2.02 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C < < < =-I *1 L=2.77mH, Vcc=50V *2 Tch=150°C *3 IF< D, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 Ω VCC =250V ID=12A VGS=10V L=2.77mH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Tch=25°C Tch=125°C
Min.
500 3.0
Typ.
Max.
5.0 25 250 100 0.52
Units
V V µA nA Ω S pF
10 0.40 5.5 11 1200 1800 140 210 6.0 9.0 17 26 15 23 34 51 7 11 30 45 11 16.5 10 15 12 1.00 1.50 0.7 4.5
ns
nC
A V µs µC
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
1.32 62.0
Units
°C/W °C/W
1
2SK3468-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
125
FUJI POWER MOSFET
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)
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