2SK3469-01MR

2SK3469-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 500 ±14 ±56 ±30 14 188.2 20 5 2.16 70 +150 -55 to +150 2 Unit V A A V A mJ kV/µs kV/µs W °C °C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) *5 < *1 L=1.76mH, Vcc=50V, See to Avalanche Energy Graph *2 Tch=150°C < < < D, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 VDS< 500V *5 t=60sec, f=60Hz *3 IF=-I = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V Tch=25°C VDS=400V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 Ω V CC=250V ID=12A VGS=10V L=1.76mH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.52 Units V V µA nA Ω S pF 10 0.40 5.5 11 1200 1800 140 210 6.0 9.0 17 26 15 23 34 51 7 11 30 45 10 15 11 16.5 14 1.00 1.50 0.7 4.5 ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.79 58.0 Units °C/W °C/W 1 2SK3469-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=50V 500 450 400 IAS=6A 80 70 60 350 50 300 EAS [mJ] PD [W] 40 250 200 IAS=9A 30 150 IAS=14A 20 100 10 50 0 0 25 50 75 100 125 150 0 25 50 75 100 125 150 0 Tc [°C] starting Tch [°C] Typical Output Characteristics ID=f(VDS):80µs Pulse test,Tch=25°C 30 28 26 24 22 20 18 7.5V 10 20V 10V 8V Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C ID [A] 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 VGS=6.5V 7.0V ID[A] 1 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80µs Pulse test, Tch=25°C 1.4 VGS=6.5V 1.2 7.0V 7.5V 1.0 RDS(on) [ Ω ] 10 8V 0.8 10V 20V gfs [S] 0.6 1 0.4 0.2 0.1 0.1 1 10 0.0 0 5 10 15 20 25 30 ID [A] ID [A] 2 2SK3469-01MR FUJI POWER MOSFET Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 1.4 1.3 1.2 1.1 1.0 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250uA max. RDS(on) [ Ω ] 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 -50 -25 0 25 50 75 100 125 150 typ. max. VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. Tch [°C] Tch [°C] Typical Gate Charge Characteristics VGS=f(Qg):ID=12A, Tch=25°C 24 22 20 Vcc= 120V 18 300V 16 14 480V 1n 10n Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Ciss VGS [V] 12 10 8 6 4 2 0 0 10 20 30 40 50 60 70 80 C [F] 100p Coss 10p Crss 1p 10 -1 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode IF=f(VSD):80µs Pulse test,Tch=25°C 100 Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V, VGS=10V, RG=10Ω 10 10 2 tr td(off) IF [A] t [ns] td(on) 10 1 tf 1 10 0.1 0.00 0 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 10 0 10 1 VSD [V] ID [A] 3 2SK3469-01MR Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 FUJI POWER MOSFET 10 1 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] 10 2 Maximum Avalanche Current vs Pulse width IAV=f(tAV):starting Tch=25°C,Vcc=50V Avalanche Current I AV [A] Single Pulse 10 1 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] http://www.fujielectric.co.jp/denshi/scd/ 4