2SK3512-01L

2SK3512-01L,S,SJ FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Symbol Ratings Unit V V DS 500 A ID ±12 A ID(puls] ±48 V VGS ±30 A IAR *2 12 mJ EAS *1 217 kV/µs dVDS/dt *4 20 dV/dt *3 5 kV/µs PD Ta=25°C 1.67 W Tc=25°C 95 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C < < < =-I *1 L=2.77mH, Vcc=50V *2 Tch=150°C *3 IF< D, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C < *4VDS=500V Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS VDS=500V VGS=0V Tch=25°C VDS=400V VGS=0V Tch=125°C VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=6A VGS=10V RGS=10 Ω V CC=250V ID=12A VGS=10V L=2.77mH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Min. 500 3.0 Typ. Max. 5.0 25 250 100 0.52 Units V V µA nA Ω S pF 10 0.40 5.5 11 1200 1800 140 210 6.0 9.0 17 26 15 23 34 51 7 11 30 45 11 16.5 10 15 12 1.00 1.50 0.7 4.5 ns nC A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.32 75.0 Units °C/W °C/W 1 2SK3512-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)