2SK3522-01_04

2SK3522-01 FUJI POWER MOSFET 200401 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof 11.6±0.2 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 500 V 500 A Continuous drain current ±25 A Pulsed drain current ±100 V Gate-source voltage ±30 A Repetitive or non-repetitive 25 mJ Maximum Avalanche Energy 336.5 kV/µs Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/µs Max. power dissipation 2.50 W 335 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C *1 L=987µH, Vcc=50V, See to Avalanche Energy Graph *2 Tch