2SK3528-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
TO-3PF
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 600 V 600 Equivalent A Continuous drain current ±21 A Pulsed drain current ±84 V Gate-source voltage ±30 A Repetitive or non-repetitive 21 mJ Maximum Avalanche Energy 333.8 kV/µs Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 kV/µs Gate(G) Max. power dissipation 3.125 W 160 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO *6 2 kVrms *1 L=1.4mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch
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