2SK3529-01

2SK3529-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 800 800 ±7 ±28 ±30 7 235.3 40 5 2.02 195 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) °C °C *1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 Tch