2SK3530-01MR

2SK3530-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Isolation Voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg VISO Ratings 800 800 ±7 ±28 ±30 7 235.3 40 5 2.16 70 +150 -55 to +150 2 Unit V V A A V A mJ kV/µs kV/µs W °C °C kVrms Equivalent circuit schematic Drain(D) Gate(G) Source(S) *6 < *1 L=8.8mH, Vcc=80V, Tch=25°C See to Avalanche Energy Graph *2 Tch =150°C *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 800V *5 VGS=-30V *6 t=60sec, f=60Hz = = = = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=800V VGS=0V Tch=125°C VDS=640V VGS=0V VGS=±30V VDS=0V ID=3.5A VGS=10V ID=3.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=3.5A VGS=10V RGS=10 Ω VCC =400V ID=7A VGS=10V L=8.8mH Tch=25°C IF=7A VGS=0V Tch=25°C IF=7A VGS=0V -di/dt=100A/µs Tch=25°C Min. 800 3.0 Typ. Max. 5.0 25 250 100 1.90 1110 160 10.5 31.5 12 60 14.4 32 4.5 10.5 1.50 Units V V µA nA Ω S pF 4.1 1.46 8.2 740 105 7 21 8 40 9.6 21.5 3 7 0.90 2.3 7.0 ns nC 7 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 1.790 58.0 Units °C/W °C/W 1 2SK3530-01MR Characteristics Allowable Power Dissipation PD=f(Tc) 10 80 8 FUJI POWER MOSFET 100 Typical Output Characteristics ID=f(VDS):80 µ s pulse test,Tch=25°C 20V 10V 8.0V 7.0V 6.5V 60 ID [A] PD [W] 6 6.0V 40 4 20 2 VGS=5.5V 0 0 25 50 75 100 125 150 0 0 5 10 15 20 Tc [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80 µ s pulse test,VDS=25V,Tch=25°C 10 100 Typical Transconductance gfs=f(ID):80 µ s pulse test,VDS=25V,Tch=25°C ID[A] 1 gfs [S] 10 0.1 1 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 VGS[V] ID [A] 2.1 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µ s pulse test,Tch=25°C VGS=5.5V 6.0V 6.5V 7.0V 8.0V 10V 20V 6.0 5.5 5.0 4.5 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=3.5A,VGS=10V 2.0 1.9 1.8 RDS(on) [ Ω ] RDS(on) [ Ω ] 4.0 3.5 3.0 2.5 2.0 max. 1.7 1.6 1.5 1.5 1.0 typ. 1.4 0.5 1.3 0 2 4 6 8 10 0.0 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3530-01MR FUJI POWER MOSFET 7.0 6.5 6.0 5.5 5.0 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250µ A 14 Typical Gate Charge Characteristics VGS=f(Qg):ID=7A,Tch=25°C 12 Vcc= 160V 400V 640V max. 10 VGS(th) [V] 4.5 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 min. VGS [V] 4.0 8 6 4 2 0 0 5 10 15 20 25 30 35 Tch [°C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 µ s pulse test,Tch=25°C 10 10 0 Ciss C [nF] 10 -1 Coss IF [A] 1 Crss 0 1 2 10 -2 10 -3 10 10 10 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] 10 3 Typical Switching Characteristics vs. ID t=f(ID):Vcc=600V,VGS=10V,RG=10 Ω 600 Maximum Avalanche Energy vs. starting Tch E(AS)=f(starting Tch):Vcc=80V IAS=3A 500 tf 10 2 400 td(off) IAS=5A 300 IAS=7A 200 tr 100 td(on) 10 1 10 0 EAS [mJ] 0 1 t [ns] 0 -1 10 10 10 0 25 50 75 100 125 150 ID [A] starting Tch [°C] 3 2SK3530-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=80V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4