2SK3532

2SK3532-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 900 V 900 Equivalent A Continuous drain current ±6 A Pulsed drain current ±24 V Gate-source voltage ±30 A Repetitive or non-repetitive 6 mJ Maximum Avalanche Energy 244 kV/µs Maximum Drain-Source dV/dt 40 Peak Diode Recovery dV/dt 5 kV/µs Gate(G) Max. power dissipation 2.16 W 70 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO *6 2 kVrms *1 L=12.4mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *2 Tch