2SK3533-01

2SK3533-01 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings V DS 900 VDSX *5 900 ID ±7 ID(puls] ±28 VGS ±30 IAR *2 7 EAS *1 269.5 dVDS/dt *4 40 dV/dt *3 5 PD Ta=25°C 2.02 Tc=25°C 225 Tch +150 -55 to +150 Tstg Unit V V A A V A mJ kV/µs kV/µs W Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=10.1mH, Vcc=90V, Tch=25°C See to Avalanche Energy Graph *3 IF< -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C *4 VDS< 900V = = = = °C °C *2 Tch