2SK3550-01R

2SK3550-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] 200304 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit V 900 V 900 Equivalent A Continuous drain current ±10 A Pulsed drain current ±40 V Gate-source voltage ±30 A Repetitive or non-repetitive 10 mJ Maximum Avalanche Energy 330 kV/µs Maximum Drain-Source dV/dt 40 kV/µs Peak Diode Recovery dV/dt 5 Gate(G) Max. power dissipation 3.13 W 130 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO *6 2 kVrms *1 L=6.06mH, Vcc=90V,Tch=25°C, See to Avalanche Energy Graph *2 Tch