2SK3579-01MR

2SK3579-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings Unit 150 V 130 V Continuous drain current ±23 A ±96 Pulsed drain current A Gate-source voltage ±20 V 23 Repetitive or non-repetitive A Maximum Avalanche Energy 242 mJ 20 Maximum Drain-Source dV/dt kV/µs Peak Diode Recovery dV/dt 5 kV/µs 2.1 Max. power dissipation W 40 +150 Operating and storage Tch °C -55 to +150 temperature range Tstg °C Isolation Voltage VISO *6 2 kVrms < < < =-I *1 L=0.67mH, Vcc=48V *2 Tch=150°C *3 IF< D, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C *4 VDS< 250V *5 VGS=-20V *6 t=60sec f=60Hz = Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Equivalent circuit schematic Drain(D) Gate(G) Source(S) Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) Test Conditions ID=250µA VGS=0V VDS=VGS ID= 250µA Tch=25°C VDS=150V VGS=0V Tch=125°C VDS=120V VGS=0V VGS=±20V VDS=0V ID=11.5A VGS=10V Min. 150 1.0 Typ. Max. 2.5 25 250 100 90 Units V V µA nA mΩ 10 65 Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate-Internal Resistance (Tep.Confficient) Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD Rg ∆Rg/∆Τch IAV V SD t rr Qrr ID=11.5A VDS =75V VGS=0V f=1MHz VDS=25V 12 VCC=48V ID=11.5A VGS=10V RGS=10 Ω VCC =48V ID=23A VGS=10V 23.3 L=100µH Tch=25°C IF=23A VGS=0V Tch=25°C IF=23A VGS=0V -di/dt=100A/µs Tch=25°C 23 24 1470 2200 190 285 18 27 24 36 23 35 300 450 45 68 48 72 6 9 12 18 39 54.4 0.12 1.10 0.13 0.6 1.65 S pF ns nC Ω %/°C A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 3.125 58.0 Units °C/W °C/W 1 2SK3579-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET Typical Output Characteristics 55 50 45 40 35 4.0V 50 45 40 35 ID=f(VDS):80µs Pulse test,Tch=25°C 20V 10V 8V 5.0V 4.5V ID [A] 30 PD [W] 30 25 25 20 20 15 10 5 0 0 25 50 75 100 125 150 VGS=3.5V 15 10 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Tc [°C] VDS [V] Typical Transfer Characteristic ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 100 100 Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 10 10 ID[A] 1 gfs [S] 1 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 0.1 0.1 1 10 100 VGS[V] ID [A] Typical Drain-Source on-state Resistance 0.16 0.14 0.12 RDS(on)=f(ID):80µs Pulse test, Tch=25°C VGS= 3.5V 4.0V 0.20 0.18 0.16 0.14 4.5V 5V 8V 10V 20V Drain-Source On-state Resistance RDS(on)=f(Tch):ID=11.5A,VGS=10V RDS(on) [ Ω ] RDS(on) [ Ω ] 0.10 0.08 0.06 0.04 0.02 0.12 0.10 0.08 0.06 0.04 0.02 max. typ. 0.00 0 10 20 30 40 50 0.00 -50 -25 0 25 50 75 100 125 150 ID [A] Tch [°C] 2 2SK3579-01MR FUJI POWER MOSFET 4.0 3.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=1mA Typical Gate Charge Characteristics 24 22 20 VGS=f(Qg):ID=23A, Tch=25°C 3.0 18 max. VGS(th) [V] 16 14 Vcc= 48V 2.5 2.0 1.5 VGS [V] min. 12 10 8 1.0 0.5 6 4 2 0.0 -50 -25 0 25 50 75 100 125 150 0 0 10 20 30 40 50 60 70 80 90 100 Tch [°C] Qg [nC] 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz Typical Forward Characteristics of Reverse Diode 100 IF=f(VSD):80µs Pulse test,Tch=25°C 10 0 Ciss 10 VGS=10V VGS=0V C [nF] Coss 10 -1 IF [A] 1 10 -2 Crss -1 10 10 0 10 1 10 2 10 3 0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 VDS [V] VSD [V] Typical Switching Characteristics vs. ID 10 3 t=f(ID):Vcc=48V, VGS=10V, RG=10Ω 300 Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)