2SK3580-01MR_03

2SK3580-01MR FUJI POWER MOSFET 200304 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220F Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Ratings 300 270 Continuous drain current ±15 Pulsed drain current ±60 Gate-source voltage ±30 Repetitive or non-repetitive 15 Maximum Avalanche Energy 155 Maximum Drain-Source dV/dt 20 Peak Diode Recovery dV/dt 5 Max. power dissipation 2.16 48 Operating and storage Tch +150 -55 to +150 temperature range Tstg Isolation Voltage VISO *6 2 < *1 L=1.2mH, Vcc=48V, See to Avalanche Energy Graph *2 Tch=150°C < < *3 IF< D, -di/dt=50A/µs, Vcc=BVDSS, Tch=150°C =-I *4 VDS < 300V = Item Drain-source voltage Symbol V DS VDSX *5 ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Unit V V A A V A mJ kV/µs kV/µs W °C °C kVrms *6 t=60sec f=60Hz Equivalent circuit schematic Drain(D) Gate(G) Source(S) *5 VGS=-30V Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID=250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=300V VGS=0V Tch=125°C VDS=240V VGS=0V VGS=±30V VDS=0V ID=6A VGS=10V ID=6A VDS=25V VDS =25V VGS=0V f=1MHz VCC=150V ID=6A VGS=10V RGS=10 Ω VCC =150V ID=12A VGS=10V L=1.0mH Tch=25°C IF=12A VGS=0V Tch=25°C IF=12A VGS=0V -di/dt=100A/µs Tch=25°C Min. 300 3.5 Typ. Max. 4.5 25 250 100 0.28 Units V V µA nA Ω S pF 5 10 0.22 10.5 980 1470 170 255 5.5 11 14.5 29 6.5 9.8 28 42 4 6 23 34.5 9.7 14.6 5.6 11.2 15 1.20 0.2 1.80 ns nC 1.80 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 2.6 58.0 Units °C/W °C/W 1 2SK3580-01MR Characteristics Allowable Power Dissipation PD=f(Tc) FUJI POWER MOSFET 60 500 Maximum Avalanche Energy vs. starting Tch EAS=f(starting Tch):Vcc=48V 50 400 IAS=6A 40 300 PD [W] 30 EAS [mJ] IAS=9A 200 20 IAS=15A 100 10 0 0 25 50 75 100 125 150 0 0 25 50 75 100 125 150 Tc [°C] starting Tch [°C] Typical Output Characteristics 30 Typical Transfer Characteristic 100 10V 8V ID=f(VDS):80µs Pulse test,Tch=25°C 20V ID=f(VGS):80µs Pulse test, VDS=25V,Tch=25°C 25 20 7.0V 10 ID [A] 15 6.5V 10 ID[A] 1 6.0V VGS=5.5V 5 0 0 2 4 6 8 10 12 0.1 0 1 2 3 4 5 6 7 8 9 10 VDS [V] VGS[V] Typical Transconductance gfs=f(ID):80µs Pulse test, VDS=25V,Tch=25°C 100 0.7 Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 µs pulse test,Tch=25°C VGS= 5.5V 6.0V 6.5V 7.0V 0.6 0.5 RDS(on) [ Ω ] 10 gfs [S] 0.4 8V 10V 20V 0.3 1 0.2 0.1 0.1 0.1 0.0 1 10 100 0 5 10 15 20 25 30 ID [A] ID [A] 2 2SK3580-01MR FUJI POWER MOSFET 0.7 Drain-Source On-state Resistance RDS(on)=f(Tch):ID=6A,VGS=10V 7.0 6.5 Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 µ A 0.6 6.0 5.5 0.5 5.0 RDS(on) [ Ω ] 0.4 max. VGS(th) [V] 4.5 4.0 3.5 3.0 2.5 max. 0.3 typ. min. 0.2 2.0 1.5 0.1 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 0.0 -50 -25 0 25 50 75 100 125 150 Tch [°C] Tch [°C] Typical Gate Charge Characteristics 20 18 16 Vcc= 150V VGS=f(Qg):ID=12A, Tch=25°C 10 1 Typical Capacitance C=f(VDS):VGS=0V,f=1MHz 10 0 14 Ciss VGS [V] C [nF] 12 10 8 6 10 -1 Coss 10 4 -2 Crss 2 0 0 10 20 30 40 10 -3 10 -1 10 0 10 1 10 2 10 3 Qg [nC] VDS [V] Typical Forward Characteristics of Reverse Diode 100 Typical Switching Characteristics vs. ID 10 3 IF=f(VSD):80µs Pulse test,Tch=25°C t=f(ID):Vcc=150V, VGS=10V, RG=10Ω 10 10 2 tf IF [A] td(off) t [ns] td(on) 1 10 1 tr 0.1 0.00 10 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 0 10 -1 10 0 10 1 10 2 VSD [V] ID [A] 3 2SK3580-01MR FUJI POWER MOSFET 10 2 Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25°C,Vcc=48V Avalanche Current I AV [A] 10 1 Single Pulse 10 0 10 -1 10 -8 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 tAV [sec] 10 1 Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0 10 0 Zth(ch-c) [°C/W] 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t [sec] http://www.fujielectric.co.jp/denshi/scd/ 4