2SK3587-01MR
FUJI POWER MOSFET
200304
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
N-CHANNEL SILICON POWER MOSFET
Outline Drawings (mm)
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 100 V 70 A Continuous drain current ±73 Equivalent A Pulsed drain current ±292 V Gate-source voltage ±30 A Non-repetitive Avalanche current 73 mJ Maximum Avalanche Energy 319.2 kV/µs Maximum Drain-Source dV/dt 20 kV/µs Peak Diode Recovery dV/dt 5 Max. power dissipation 2.16 W Gate(G) 95 Operating and storage Tch +150 °C temperature range Tstg -55 to +150 °C Isolation Voltage VISO *6 2 kVrms *1 L=71.9µH, Vcc=48V,Tch=25°C, See to Avalanche Energy Graph *2 Tch
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