2SK3588-01L

2SK3588-01L,S,SJ FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof N-CHANNEL SILICON POWER MOSFET Outline Drawings Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters P4 Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-repetitive Avalanche current Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol V DS VDSX *5 ID ID(puls] VGS IAS *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C Tch Tstg Ratings 100 70 ±50 ±200 ±30 50 465 20 5 1.67 135 +150 -55 to +150 Unit V V A A V A mJ kV/µs kV/µs W °C °C Equivalent circuit schematic Drain(D) Gate(G) Source(S) *1 L=223µH, Vcc=48V *2 Tch< 150°C *3 IF < -ID, -di/dt=50A/µs, Vcc < BVDSS, Tch < 150°C = = = = < 100V *5 VGS=-30V *4 VDS = Electrical characteristics (Tc =25°C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV V SD t rr Qrr Test Conditions ID= 250µA VGS=0V ID= 250µA VDS=VGS Tch=25°C VDS=100V VGS=0V Tch=125°C VDS=80V VGS=0V VGS=±30V VDS=0V ID=25A VGS=10V ID=25A VDS=25V VDS =75V VGS=0V f=1MHz VCC=48V ID=25A VGS=10V RGS=10 Ω V CC =50V ID=50A VGS=10V L=100µH Tch=25°C IF=50A VGS=0V Tch=25°C IF=50A VGS=0V -di/dt=100A/µs Tch=25°C Min. 100 3.0 Typ. Max. 5.0 25 250 100 25 2745 690 57 30 53 75 35 78 24 27 1.65 Units V V µA nA mΩ S pF 15 10 19 30 1830 460 38 20 35 50 23 52 16 18 1.10 0.1 0.4 ns nC 50 A V µs µC Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient Min. Typ. Max. 0.926 75.0 Units °C/W °C/W www.fujielectric.co.jp/denshi/scd 1 2SK3588-01L,S,SJ Characteristics Allowable Power Dissipation PD=f(Tc) 200 175 400 150 125 100 75 50 100 25 0 0 25 50 75 100 125 150 0 0 25 FUJI POWER MOSFET Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=48V,I(AV)